Disturbed and scattered: The Path of thermal conduction through diamond lattice

F. Faili, W. Huang, J. Calvo, Martin Kuball, D. Twitchen
{"title":"Disturbed and scattered: The Path of thermal conduction through diamond lattice","authors":"F. Faili, W. Huang, J. Calvo, Martin Kuball, D. Twitchen","doi":"10.1109/ITHERM.2016.7517675","DOIUrl":null,"url":null,"abstract":"With more phonons carrying the energy in the lattice, the phonon density of states in diamond extends to a much higher frequencies than that of any other material. This is related to the Debye temperature of diamond, being the highest of any bulk materials and of having the highest sound velocity of any known bulk materials. However, the thermal conductivity not only depends on the number of phonons and how fast they are, but also on how long they can travel without being disturbed or scattered. The measurement of this length of travel is the Mean Free Path of the phonons, l, which depends on the number of phonons in the lattice through the 3-phonon processes (Normal and Umpklapp), and the imperfections in the lattice (boundaries, grain boundaries, non sp3 bonds, isotopes, impurities, extended defects, dislocations, etc.). Consequently, the “real world” thermal conductivity of a given piece of diamond will depend on the “quality” of the lattice, yielding values from 1 W/m°K (ultra-nanocrystalline diamond) to more than 3400 W/m°K for isotopically pure single crystal diamond.","PeriodicalId":426908,"journal":{"name":"2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)","volume":"26 11-12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITHERM.2016.7517675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

With more phonons carrying the energy in the lattice, the phonon density of states in diamond extends to a much higher frequencies than that of any other material. This is related to the Debye temperature of diamond, being the highest of any bulk materials and of having the highest sound velocity of any known bulk materials. However, the thermal conductivity not only depends on the number of phonons and how fast they are, but also on how long they can travel without being disturbed or scattered. The measurement of this length of travel is the Mean Free Path of the phonons, l, which depends on the number of phonons in the lattice through the 3-phonon processes (Normal and Umpklapp), and the imperfections in the lattice (boundaries, grain boundaries, non sp3 bonds, isotopes, impurities, extended defects, dislocations, etc.). Consequently, the “real world” thermal conductivity of a given piece of diamond will depend on the “quality” of the lattice, yielding values from 1 W/m°K (ultra-nanocrystalline diamond) to more than 3400 W/m°K for isotopically pure single crystal diamond.
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扰动与散射:通过金刚石晶格的热传导路径
由于晶格中携带能量的声子较多,金刚石中声子态密度的频率远高于其他材料。这与金刚石的德拜温度有关,它是所有块状材料中最高的,也是所有已知块状材料中声速最高的。然而,导热性不仅取决于声子的数量和速度,还取决于它们在不受干扰或散射的情况下能传播多长时间。该行程长度的测量是声子的平均自由程1,它取决于晶格中通过3声子过程(Normal和umplklapp)的声子数量,以及晶格中的缺陷(边界、晶界、非sp3键、同位素、杂质、扩展缺陷、位错等)。因此,给定金刚石块的“真实世界”热导率将取决于晶格的“质量”,其值从1 W/m°K(超纳米晶金刚石)到3400 W/m°K以上(同位素纯单晶金刚石)。
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