Thin SQI NEMS accelerometers compatible with In-IC integration

E. Oilier, L. Duraffourg, M. Delaye, S. Deneuville, V. Nguyen, P. Andreucci, H. Grange, P. Robert, F. Marchi, R. Dianoux, T. Baron
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引用次数: 3

Abstract

The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "In-IC" integration. The goal of this work is to demonstrate the feasibility in terms of concept and technological manufacturing. Modeling of Casimir force, development of hybrid e-beam/DUV lithography and FH-vapor release, specific AFM characterizations have allowed to design, fabricate and characterize first devices.
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薄SQI NEMS加速度计兼容In-IC集成
本文提出了一种基于薄SOI技术并兼容In-IC集成的加速度计用薄SOI NEMS结构。这项工作的目的是证明在概念和技术制造方面的可行性。卡西米尔力的建模,电子束/DUV混合光刻和fh蒸气释放的开发,特定的AFM表征使得设计,制造和表征第一个设备成为可能。
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