Junction temperature dynamics of power MOSFET and SiC diode

2009 IEEE 6th International Power Electronics and Motion Control Conference Pub Date : 2009-05-17 DOI:10.1109/IPEMC.2009.5157397

S. Pyo, K. Sheng

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引用次数: 24

Abstract

In this paper, junction temperature behavior of Si power MOSFET and SiC diodes when conducting significant current is investigated in detail by experiment and theoretical analysis. The dynamic variation and steady-state values of device junction temperatures when carrying different currents are studied. The results show that the device steady-state junction temperature versus current curve rises sharply after around 100°C and 150°C, for the Si power MOSFET and SiC diode, respectively. Maximum obtainable steady-state junction temperatures are found to be around 190°C for the MOSFET and 220°C for the SiC diode. The experimental results are well-matched by PSpice equivalent thermal circuit simulation and theoretical analytical calculation. While such limitation does not present as an issue for Si Power devices (as they are generally not expected to operate above 190°C), it could limit one's ability in exploring the intrinsic very high temperature capability of SiC power devices. System design approaches that can alleviate these limitations for the SiC power device are discussed and recommended.

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功率MOSFET和SiC二极管结温动态

本文通过实验和理论分析，详细研究了硅功率MOSFET和SiC二极管在导通大电流时的结温行为。研究了载流不同时器件结温的动态变化和稳态值。结果表明，硅功率MOSFET和SiC二极管分别在100°C和150°C左右时，器件稳态结温随电流曲线急剧上升。发现MOSFET的最高可获得稳态结温约为190°C, SiC二极管的最高可获得稳态结温约为220°C。实验结果与PSpice等效热电路仿真和理论分析计算相吻合。虽然这种限制对硅功率器件来说不是问题(因为它们通常不会在190°C以上工作)，但它可能会限制人们探索SiC功率器件固有的非常高温能力的能力。讨论并推荐了可以缓解SiC功率器件这些限制的系统设计方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2009 IEEE 6th International Power Electronics and Motion Control Conference

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