Statistical estimation of leakage-induced power grid voltage drop considering within-die process variations

Proceedings 2003. Design Automation Conference (IEEE Cat. No.03CH37451) Pub Date : 2003-06-02 DOI:10.1145/775832.776047

I. A. Ferzli, F. Najm

引用次数: 29

Abstract

Transistor threshold voltages (V/sub th/) have been reduced as part of on-going technology scaling. The smaller V/sub th/ values feature increased fluctuations due to process variations, with a strong within-die component. Correspondingly, given the exponential dependence of leakage on V/sub th/, circuit leakage currents are increasing significantly and have strong within-die statistical variations. With these currents loading the power grid, the grid develops large voltage drops, which is an unavoidable background level of noise on the grid. We develop techniques for estimation of the statistics of the leakage-induced power grid voltage drop based on given statistics of the circuit leakage currents.

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考虑模内工艺变化的漏致电网电压降的统计估计

晶体管阈值电压(V/sub /)作为正在进行的技术扩展的一部分已经降低。较小的V/sub /值由于工艺变化而增加波动，具有很强的模内成分。相应地，考虑到泄漏对V/sub /的指数依赖性，电路泄漏电流显著增加，并且在模内具有很强的统计变化。随着这些电流加载电网，电网产生了较大的电压降，这是电网不可避免的背景噪声水平。我们开发了基于给定电路泄漏电流统计量的漏致电网电压降统计量估计技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings 2003. Design Automation Conference (IEEE Cat. No.03CH37451)

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