{"title":"FET model statistics and their effects on design centering and yield prediction for microwave amplifiers","authors":"J. Purviance, D. Criss, D. Monteith","doi":"10.1109/MWSYM.1988.22039","DOIUrl":null,"url":null,"abstract":"The first- and second-order statistics for the model parameters of a 0.5- mu m GaAs FET are determined and then tested in a statistical circuit design and yield simulation. The purpose is to identify what statistical FET data is needed to statistically design a high-yield monolithic microwave integrated circuit (MMIC) amplifier. An example is used to identify which aspects of statistical circuit design are sensitive to the proper FET model statistics. It is shown that the design values are insensitive and the yield estimates are sensitive. The important issues in statistical circuit design are summarized and a discussion of the needed future works is given.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
The first- and second-order statistics for the model parameters of a 0.5- mu m GaAs FET are determined and then tested in a statistical circuit design and yield simulation. The purpose is to identify what statistical FET data is needed to statistically design a high-yield monolithic microwave integrated circuit (MMIC) amplifier. An example is used to identify which aspects of statistical circuit design are sensitive to the proper FET model statistics. It is shown that the design values are insensitive and the yield estimates are sensitive. The important issues in statistical circuit design are summarized and a discussion of the needed future works is given.<>
确定了0.5 μ m GaAs场效应管模型参数的一阶和二阶统计量，并在统计电路设计和良率仿真中进行了测试。目的是确定统计场效应管数据需要统计设计一个高产量的单片微波集成电路(MMIC)放大器。用一个例子来确定统计电路设计的哪些方面对适当的场效应管模型统计敏感。结果表明，设计值是不敏感的，而产量估计是敏感的。总结了统计电路设计中的重要问题，并对今后需要进行的工作进行了讨论。
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