W. Filali, S. Oussalah, N. Sengouga, M. Henini, David Taylor
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引用次数: 0
Abstract
This paper presents a systematic simulation approach for analyzing a p-type Ti/Au/Al0.29Ga0.71 As Schottky diode with traps. The traps parameters are extracted by DLTS (Deep Level Transient Spectroscopy) technique. Simulation was carried out using Atlas-SILVACO TCAD 2D simulator. The simulation is performed using the appropriate physical models to explain the behavior of the physical mechanisms of the Schottky diode. The obtained results are the current-voltage and capacitance-voltage characteristic as function of temperature, frequency and Schottky contact diameters with and without defects.
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