{"title":"Numerical noise model for the AlGaN/GaN HEMT","authors":"Sungjae Lee, K. Webb","doi":"10.1109/MWSYM.2004.1339166","DOIUrl":null,"url":null,"abstract":"A numerical approach to simulate the intrinsic noise sources within transistors is described. Using a 2D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green's function approach, an equivalent of Shockley's impedance field method. Case studies with AlGaN/GaN HEMTs compare the numerical simulation results to those from measurements, showing good agreement.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2004.1339166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A numerical approach to simulate the intrinsic noise sources within transistors is described. Using a 2D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green's function approach, an equivalent of Shockley's impedance field method. Case studies with AlGaN/GaN HEMTs compare the numerical simulation results to those from measurements, showing good agreement.
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