Random dopant fluctuation in gate-all-around nanowire FET

C. Tan, Xiangchen Chen
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引用次数: 14

Abstract

The random dopant fluctuation (RDF) induced threshold voltage variation are compared between a junctionless and an inversion mode gate-all-around (GAA) silicon nanowire FET. We found that the RDF induced variation of junctionless GAA nanowire FET is larger and more sensitive than that of the inversion mode GAA nanowire FET, and it is contributed by the higher doping concentration in the nanowire of the junctionless device. The impact of RDF on the Id-Vg of the FETs found in this work also suggest appropriate operating conditions for the FETs in order to reduce the impact of RDF.
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栅极全能纳米线场效应管中的随机掺杂波动
比较了无结和反转模式栅极全能(GAA)硅纳米线场效应管的随机掺杂波动(RDF)诱导阈值电压变化。我们发现,无结GAA纳米线场效应管的RDF诱导变化比反转模式GAA纳米线场效应管更大、更敏感,这是由于无结器件的纳米线中掺杂浓度更高所致。本工作中发现的RDF对fet的Id-Vg的影响也为fet提供了适当的操作条件,以减少RDF的影响。
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