R. Mottahedeh, S. Haywood, D. Pattison, P. Kean, I. Bennion, M. Hopkinson, D. Prescott, M. Pate
{"title":"Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW","authors":"R. Mottahedeh, S. Haywood, D. Pattison, P. Kean, I. Bennion, M. Hopkinson, D. Prescott, M. Pate","doi":"10.1109/LEOS.1996.571954","DOIUrl":null,"url":null,"abstract":"Both linear and nonlinear absorption have been studied in a strain-balanced InAsP/InGaAs structure at room temperature. The sample, known as M552 was grown by solid source MBE. It consisted of 10 periods of 113 /spl Aring/ In/sub 0.44/Ga/sub 0.56/As/103 /spl Aring/ InAs/sub 0.2/P/sub 0.8/ in a pin diode configuration. X-ray diffraction indicated that there was 0.6% tensile strain in the InGaAs well and 0.6% compressive strain in the InAsP barrier. Using a 4 band k.p model which takes into account the strain we calculate the barriers heights seen by the n=l electron, heavy and light hole subbands to be 1O7 meV, 181 meV and 239 meV respectively.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.571954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Both linear and nonlinear absorption have been studied in a strain-balanced InAsP/InGaAs structure at room temperature. The sample, known as M552 was grown by solid source MBE. It consisted of 10 periods of 113 /spl Aring/ In/sub 0.44/Ga/sub 0.56/As/103 /spl Aring/ InAs/sub 0.2/P/sub 0.8/ in a pin diode configuration. X-ray diffraction indicated that there was 0.6% tensile strain in the InGaAs well and 0.6% compressive strain in the InAsP barrier. Using a 4 band k.p model which takes into account the strain we calculate the barriers heights seen by the n=l electron, heavy and light hole subbands to be 1O7 meV, 181 meV and 239 meV respectively.
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