Effect of addition of TiO2/SiO2 nanoparticles on Hc2 and Hirr in MgB2 bulks

Yun Zhang, S. Soltanian, Yue Zhao, Sihai Zhou, S. Dou
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Abstract

In this paper, MgB2 bulks were prepared with doped TiO2 nanoparticles surface-modified by 5-10% SiO2. Quantitative X-ray diffraction (XRD) analysis was performed to obtain the weight fraction of impurities using the Rietveld method. The effects of addition of TiO2/SiO2 nanoparticles on the critical temperature (Tc), the upper critical field (Hc2), and the irreversibility field (Hirr) as a function of doping rates at 750degC are reported. It has been found that the addition of TiO2/SiO2 nanoparticles resulted in small depressions in Tc, while the Hc2 and Hirr performances were improved due to TiO2/SiO2 nanoparticle doping.
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TiO2/SiO2纳米颗粒对MgB2块体中Hc2和Hirr的影响
本文采用掺杂TiO2纳米粒子,表面经过5-10% SiO2修饰,制备了MgB2块体。采用Rietveld法进行定量x射线衍射(XRD)分析,得到杂质的质量分数。报道了TiO2/SiO2纳米粒子的加入对750℃下临界温度(Tc)、上临界场(Hc2)和不可逆场(Hirr)随掺杂率的变化规律的影响。研究发现,TiO2/SiO2纳米颗粒的加入对Tc有较小的抑制作用,而TiO2/SiO2纳米颗粒的掺杂则提高了Hc2和Hirr的性能。
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