V. Babaev, N. Savchenko, M. Guseva, V.P. Vaullin, V. S. Guden, V. V. Khvostov
{"title":"c-BN coating produced by arc-jet plasma","authors":"V. Babaev, N. Savchenko, M. Guseva, V.P. Vaullin, V. S. Guden, V. V. Khvostov","doi":"10.1109/WBL.2001.946566","DOIUrl":null,"url":null,"abstract":"c-BN coating with the thickness of 1 mm was produced on an Mo substrate. Arc-jet deposition was performed in a mixture of Ar and N/sub 2/ gases. h-BN was used as the precursor. The equipment included a W-hollow cathode with plasma density about 10/sup 14/ cm/sup -3/ at 200 A discharge current. The Ar pressure in the working chamber was 1 Torr and the residual pressure was of 10/sup -2/ Torr. The working substrate temperature ranged from 500 to 1000/spl deg/C and the film growth rate was about 0.2 mm/h. Chemical analysis reveals the presence of carbon. The electron diffraction pattern (JEM-100C) corresponds to polycrystalline cubic structure with a crystalline mean size of 1000 /spl Aring/ and lattice constant a=3.58 /spl Aring/.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
c-BN coating with the thickness of 1 mm was produced on an Mo substrate. Arc-jet deposition was performed in a mixture of Ar and N/sub 2/ gases. h-BN was used as the precursor. The equipment included a W-hollow cathode with plasma density about 10/sup 14/ cm/sup -3/ at 200 A discharge current. The Ar pressure in the working chamber was 1 Torr and the residual pressure was of 10/sup -2/ Torr. The working substrate temperature ranged from 500 to 1000/spl deg/C and the film growth rate was about 0.2 mm/h. Chemical analysis reveals the presence of carbon. The electron diffraction pattern (JEM-100C) corresponds to polycrystalline cubic structure with a crystalline mean size of 1000 /spl Aring/ and lattice constant a=3.58 /spl Aring/.
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