Performance of a GaN-HEMT synchronous boost converter in ZVS and hard switching mode

Abstract

The loss contribution of a 2.3 kW synchronous GaN-HEMT boost converter for an input voltage of 250 V and an output voltage of 500 V was analyzed. A simulation model which consists of two parts is introduced. First, a physics-based model is used to determine the switching losses. Then, a system simulation is applied to calculate the losses of the specific elements. This approach allows a fast and accurate system evaluation as required for further system optimization. In this work, a hard- and a zero-voltage turn-on switching converter are compared. Measurements were performed to verify the simulation model, showing a good agreement. A peak efficiency of 99 % was achieved for an output power of 1.4 kW. Even with an output power above 400 W, it was possible to obtain a system efficiency exceeding 98 %.