Image charge method for electrostatic calculations in field emission diodes

J. Sáenz, G. Mesa
{"title":"Image charge method for electrostatic calculations in field emission diodes","authors":"J. Sáenz, G. Mesa","doi":"10.1109/IVMC.1996.601785","DOIUrl":null,"url":null,"abstract":"We present a method to calculate the interaction energies of a charge placed between a metallic tip of arbitrary shape and a sample surface. The basic idea is to replace the electrodes by a set of image charges. These charges are adjusted in order to fit the boundary conditions on the surfaces. As an application of the method, we describe the field characteristics of a field-emission diode as a function of the gap between the electrodes for different tip shapes. The three-dimensional potential barrier (including image corrections) for electron field emission is also calculated.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"178 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Vacuum Microelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVMC.1996.601785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

We present a method to calculate the interaction energies of a charge placed between a metallic tip of arbitrary shape and a sample surface. The basic idea is to replace the electrodes by a set of image charges. These charges are adjusted in order to fit the boundary conditions on the surfaces. As an application of the method, we describe the field characteristics of a field-emission diode as a function of the gap between the electrodes for different tip shapes. The three-dimensional potential barrier (including image corrections) for electron field emission is also calculated.
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场发射二极管静电计算的象电荷法
我们提出了一种计算任意形状金属尖端与样品表面之间电荷相互作用能的方法。其基本思想是用一组图像电荷代替电极。调整这些电荷以适应表面上的边界条件。作为该方法的一个应用,我们描述了场发射二极管的场特性作为不同尖端形状电极之间间隙的函数。计算了电子场发射的三维势垒(包括图像校正)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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