A. Evtukh, V. Litovchenko, R. Marchenko, S. Kydzinovski
The electron field emission from silicon tip arrays with layered structures on their surface was investigated. The main task of study were to enhance and stabilize field emission. Among different prepared layered structures were n-Si-SiO/sub 2/, n-Si-Cs-SiO/sub 2/, n-Si-SiO/sub 2/-Si-SiO/sub 2/, n-Si-Si/sub 3/N/sub 4/-Si-SiO/sub 2/, etc. The thicknesses of dielectric layers were in range 1-3 nm and they ware prepared both by thermal oxidation and by chemical vapor deposition (CVD). The cesium was deposited on the cathocodes by the application of cesium salt (CsCl) in solution. The outer SiO/sub 2/ layer defends cesium from evaporate during heating or reaction under exposure in gases. The thin silicon layer (Si) layer was formed by CVD. The measurements of electron field emission from layered structures show sufficient enhancement emission in case of using of the delta-doped cesium layer. The incorporation of cesium is important way to decrease threshold voltage of cold cathode operation and in our case using of SiO/sub 2/ lever allows to stabilize of emission. The explanation of experimental results on base of energy diagrams of layered structures has been performed. In case of structures with delta-doped layer added mechanism of tunneling, namely resonant tunneling was realized.
研究了表面具有层状结构的硅尖阵列的电子场发射特性。研究的主要任务是增强和稳定场发射。不同制备的层状结构有N -Si-SiO/sub 2/、N - si - cs - sio /sub 2/、N -Si-SiO/sub 2/、N - si - si /sub 3/N/sub 4/-Si-SiO/sub 2/等。介质层厚度在1 ~ 3 nm之间，采用热氧化法和化学气相沉积法制备。用铯盐(CsCl)溶液沉积铯在阴极码上。外层的SiO/ sub2 /层保护铯在加热或暴露在气体中的反应中不被蒸发。采用气相沉积法制备了薄硅层(Si)。层状结构的电子场发射测量结果表明，在使用掺杂铯层的情况下，层状结构的电子场发射有充分的增强发射。铯的加入是降低冷阴极工作阈值电压的重要途径，在我们的情况下，使用SiO/ sub2 /杠杆可以稳定发射。利用层状结构的能量图对实验结果进行了解释。对于掺杂δ层的结构，增加了隧穿机制，即共振隧穿。
{"title":"Layered structures with delta-doped layers for enhancement of field emission","authors":"A. Evtukh, V. Litovchenko, R. Marchenko, S. Kydzinovski","doi":"10.1116/1.589334","DOIUrl":"https://doi.org/10.1116/1.589334","url":null,"abstract":"The electron field emission from silicon tip arrays with layered structures on their surface was investigated. The main task of study were to enhance and stabilize field emission. Among different prepared layered structures were n-Si-SiO/sub 2/, n-Si-Cs-SiO/sub 2/, n-Si-SiO/sub 2/-Si-SiO/sub 2/, n-Si-Si/sub 3/N/sub 4/-Si-SiO/sub 2/, etc. The thicknesses of dielectric layers were in range 1-3 nm and they ware prepared both by thermal oxidation and by chemical vapor deposition (CVD). The cesium was deposited on the cathocodes by the application of cesium salt (CsCl) in solution. The outer SiO/sub 2/ layer defends cesium from evaporate during heating or reaction under exposure in gases. The thin silicon layer (Si) layer was formed by CVD. The measurements of electron field emission from layered structures show sufficient enhancement emission in case of using of the delta-doped cesium layer. The incorporation of cesium is important way to decrease threshold voltage of cold cathode operation and in our case using of SiO/sub 2/ lever allows to stabilize of emission. The explanation of experimental results on base of energy diagrams of layered structures has been performed. In case of structures with delta-doped layer added mechanism of tunneling, namely resonant tunneling was realized.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129278360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601915
R. Z. Bakhtizin, Yu.M. Yamaguzing, S. Pshenichnyuk
Summary form only given, as follows. Si tips coated with thin diamond films show considerable promise for use in field emission cathodes because these films demonstrate an air-stable negative electron affinity surface. Such a surface may allow for fields emission at low electric field under poor vacuum conditions. In this work, a new technique for preparation of high quality diamond films with low impurity contamination has been developed. This technique is based on deposition of low energy C/sup +/ ions. These ions have been generated in duoplasmatron and directed to the Si tip via the beam forming system and mass-separation with Wien's filter. A study aimed an understanding the electronic properties of diamond adsorbed on the Si surface has been carried out by means of probe-hole I-V characteristics measurements and field emission electron spectroscopy as well. The paper reports on recent findings to emerge from the above study, and presents a pertinent model to explain the significant changes in energy spectra of field emitted electrons. Finally, we discuss the possible mechanism of electron transport in such a system.
{"title":"Field emission properties of diamond thin films","authors":"R. Z. Bakhtizin, Yu.M. Yamaguzing, S. Pshenichnyuk","doi":"10.1109/IVMC.1996.601915","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601915","url":null,"abstract":"Summary form only given, as follows. Si tips coated with thin diamond films show considerable promise for use in field emission cathodes because these films demonstrate an air-stable negative electron affinity surface. Such a surface may allow for fields emission at low electric field under poor vacuum conditions. In this work, a new technique for preparation of high quality diamond films with low impurity contamination has been developed. This technique is based on deposition of low energy C/sup +/ ions. These ions have been generated in duoplasmatron and directed to the Si tip via the beam forming system and mass-separation with Wien's filter. A study aimed an understanding the electronic properties of diamond adsorbed on the Si surface has been carried out by means of probe-hole I-V characteristics measurements and field emission electron spectroscopy as well. The paper reports on recent findings to emerge from the above study, and presents a pertinent model to explain the significant changes in energy spectra of field emitted electrons. Finally, we discuss the possible mechanism of electron transport in such a system.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114988154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601789
N. Chubun, O. L. Golubev, B. Djubua, V. N. Shrednik
Field electron emission of Mo on Mo, W on W and Re on Re vacuum deposits has been investigated. Many monatomic layers of Mo, W and Re have been deposited on the tip of the same material. A wide range of substrate temperature has been used: from room temperature to 660, 800 and 660 K for Mo, W and Re respectively. Three surface forms of deposit have been obtained in these temperature ranges: (1) low-temperature disordered condensate; (2) so called replication; and (3) ordered crystal outgrowths (so called "collars"). Then the stability of field electron current was examined. As a result it was shown that the stage of replication was characterised as the most stable form. The most unstable situation was typical for the low-temperature disordered condensate.
{"title":"Stability of field electron emission of W, Mo and Re vacuum deposits depending on substrate temperature","authors":"N. Chubun, O. L. Golubev, B. Djubua, V. N. Shrednik","doi":"10.1109/IVMC.1996.601789","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601789","url":null,"abstract":"Field electron emission of Mo on Mo, W on W and Re on Re vacuum deposits has been investigated. Many monatomic layers of Mo, W and Re have been deposited on the tip of the same material. A wide range of substrate temperature has been used: from room temperature to 660, 800 and 660 K for Mo, W and Re respectively. Three surface forms of deposit have been obtained in these temperature ranges: (1) low-temperature disordered condensate; (2) so called replication; and (3) ordered crystal outgrowths (so called \"collars\"). Then the stability of field electron current was examined. As a result it was shown that the stage of replication was characterised as the most stable form. The most unstable situation was typical for the low-temperature disordered condensate.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"378 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115707492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601900
E. N. Petrov
The problem of fabrication and mass production of vacuum microelectronic devices, Field Emission Displays (FEDs) in particular, can be successfully worked out, as a general rule, only with complex research and development of basic elements of the devices, their structures, available materials and realization technologies. Estimates of payback of main costs for development and manufacture of 1/4 VGA 10" FEDs, 10/sup 5/ pcs/year, for Planar Edge Arrays (PEAs) as basic emitting structures, are positive.
{"title":"Economic estimates of forecasted development and manufacture of field emission displays on planar edge elemental base","authors":"E. N. Petrov","doi":"10.1109/IVMC.1996.601900","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601900","url":null,"abstract":"The problem of fabrication and mass production of vacuum microelectronic devices, Field Emission Displays (FEDs) in particular, can be successfully worked out, as a general rule, only with complex research and development of basic elements of the devices, their structures, available materials and realization technologies. Estimates of payback of main costs for development and manufacture of 1/4 VGA 10\" FEDs, 10/sup 5/ pcs/year, for Planar Edge Arrays (PEAs) as basic emitting structures, are positive.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123091090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601855
H. Uh, S. Kwon, J. Lee, H. S. Park
Field emission characteristics from n/sup +/ polycrystalline silicon (poly-Si) field emitters fabricated on an insulating layer are presented and compared with those from single crystal silicon field emitters. SEM micrographs of fabricated poly-Si emitters showed poor uniformity in structure due to the oxide thickness deviation associated with grain boundaries of poly-Si in sharpening oxidation step. The anode current of 0.1 /spl mu/A/tip was measured at the gate bias of 82 V from 625 poly-Si tips with gate hole diameter of 1.2 /spl mu/m and 80 V from 625 single crystal Si tips with diameter of 1.6 /spl mu/m, respectively.
{"title":"Fabrication and characterization of gated n/sup +/ polycrystalline silicon field emitter arrays","authors":"H. Uh, S. Kwon, J. Lee, H. S. Park","doi":"10.1109/IVMC.1996.601855","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601855","url":null,"abstract":"Field emission characteristics from n/sup +/ polycrystalline silicon (poly-Si) field emitters fabricated on an insulating layer are presented and compared with those from single crystal silicon field emitters. SEM micrographs of fabricated poly-Si emitters showed poor uniformity in structure due to the oxide thickness deviation associated with grain boundaries of poly-Si in sharpening oxidation step. The anode current of 0.1 /spl mu/A/tip was measured at the gate bias of 82 V from 625 poly-Si tips with gate hole diameter of 1.2 /spl mu/m and 80 V from 625 single crystal Si tips with diameter of 1.6 /spl mu/m, respectively.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127376489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601793
V. G. Ivanov
Summary form only given, as follows. It has been known that field emission current-voltage characteristics for p-type semiconductors are essentially nonlinear. There are three adequately described regions of these characteristics. For the first region field emission characteristics correspond with the Fowler-Nordheim law. In the second region the current slightly depends on voltage (it is the saturation region), while for the third region the current once again begins to increase appreciably. This increase was explained by impact ionization of impurity centres. In was supposed that for the subsequent voltage increase this process leads to an avalanche rise in current and an explosive-like destruction of the field emitter. There is some critical strength of electric field (voltage) and when the electric field strength reaches this critical value, field emission current begins spontaneously to increase in time with immutable field strength (anode voltage). This phenomenon was named the intrinsic breakdown of the semiconductor in the process of field emission. The results of our investigation for Ge, high resistance Si (p=2/spl times/10/sup 3/ /spl Omega/.cm) and GaAs are presented. We have made an attempt to trace the general regularities of the observed intrinsic breakdown for various semiconductor materials and to distinguish the main parameters and conditions of this phenomenon.
{"title":"Phenomenon of intrinsic breakdown in the field emission p-type semiconductors","authors":"V. G. Ivanov","doi":"10.1109/IVMC.1996.601793","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601793","url":null,"abstract":"Summary form only given, as follows. It has been known that field emission current-voltage characteristics for p-type semiconductors are essentially nonlinear. There are three adequately described regions of these characteristics. For the first region field emission characteristics correspond with the Fowler-Nordheim law. In the second region the current slightly depends on voltage (it is the saturation region), while for the third region the current once again begins to increase appreciably. This increase was explained by impact ionization of impurity centres. In was supposed that for the subsequent voltage increase this process leads to an avalanche rise in current and an explosive-like destruction of the field emitter. There is some critical strength of electric field (voltage) and when the electric field strength reaches this critical value, field emission current begins spontaneously to increase in time with immutable field strength (anode voltage). This phenomenon was named the intrinsic breakdown of the semiconductor in the process of field emission. The results of our investigation for Ge, high resistance Si (p=2/spl times/10/sup 3/ /spl Omega/.cm) and GaAs are presented. We have made an attempt to trace the general regularities of the observed intrinsic breakdown for various semiconductor materials and to distinguish the main parameters and conditions of this phenomenon.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116541140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601848
H. Busta, G. Gammie, S. Skala, M. Fury, M. Stell, T. Myers
Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 /spl mu/m have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were fabricated with Cr, Cr-cermet, TiW/Au, SiC, and SiC/TiW/Au as the emitter materials and with 1 /spl mu/m spacings between the emitter rims and the silicon gates. The gate post heights ranged from 4 to 6 /spl mu/m. Measurements of single volcano SiC and SiC/TiW/Au emitters showed that the emission current scales with the periphery of the devices. CMP offers a readily scaleable process for the manufacturing of large area FEDs.
{"title":"Fabrication of volcano emitters using chemical mechanical polishing (CMP)","authors":"H. Busta, G. Gammie, S. Skala, M. Fury, M. Stell, T. Myers","doi":"10.1109/IVMC.1996.601848","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601848","url":null,"abstract":"Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 /spl mu/m have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were fabricated with Cr, Cr-cermet, TiW/Au, SiC, and SiC/TiW/Au as the emitter materials and with 1 /spl mu/m spacings between the emitter rims and the silicon gates. The gate post heights ranged from 4 to 6 /spl mu/m. Measurements of single volcano SiC and SiC/TiW/Au emitters showed that the emission current scales with the periphery of the devices. CMP offers a readily scaleable process for the manufacturing of large area FEDs.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122840841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601823
W. Kang, J. Davidson, M. George, J. Wittig, I. Milosavljevic, Q. Li, J.F. Xu, M. Howell, D. Kerns
Micro patterned diamond pyramidal tips have demonstrated high emission current. This paper presents the physical analyses that have proceeded to characterize the topology, morphology and microstructure of these diamond microtips using transmission electron microscopy, atomic force microscopy, scanning tunneling microscopy, and Raman spectroscopy. The results show that the diamond microtips are indeed a polycrystalline diamond structure as evidenced by Raman spectroscopy and diffraction analysis of the TEM. AFM and STM results provide detailed information as to the surface and tip shape of the diamond emitters. AFM/STM observations suggest a nucleation and growth process whereby the manner in which CVD diamond nucleates on the planar top surface of the tip substrate is distinct and different from the way the diamond grows in the cavity "mold". Further, the TEM results contrast the diamond microstructure in the field area with that of the tip where distinct differences are observed.
{"title":"Physical characterization of diamond pyramidal microtip emitters","authors":"W. Kang, J. Davidson, M. George, J. Wittig, I. Milosavljevic, Q. Li, J.F. Xu, M. Howell, D. Kerns","doi":"10.1109/IVMC.1996.601823","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601823","url":null,"abstract":"Micro patterned diamond pyramidal tips have demonstrated high emission current. This paper presents the physical analyses that have proceeded to characterize the topology, morphology and microstructure of these diamond microtips using transmission electron microscopy, atomic force microscopy, scanning tunneling microscopy, and Raman spectroscopy. The results show that the diamond microtips are indeed a polycrystalline diamond structure as evidenced by Raman spectroscopy and diffraction analysis of the TEM. AFM and STM results provide detailed information as to the surface and tip shape of the diamond emitters. AFM/STM observations suggest a nucleation and growth process whereby the manner in which CVD diamond nucleates on the planar top surface of the tip substrate is distinct and different from the way the diamond grows in the cavity \"mold\". Further, the TEM results contrast the diamond microstructure in the field area with that of the tip where distinct differences are observed.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123981704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601812
B. Ju, H. Park, Yun‐Hi Lee, I. Chung, M.R. Haskard, Juag-Ho Park, M. Oh
Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.
{"title":"Field emission properties of Mo-coated Si field emitter arrays and formation of molybdenum silicide","authors":"B. Ju, H. Park, Yun‐Hi Lee, I. Chung, M.R. Haskard, Juag-Ho Park, M. Oh","doi":"10.1109/IVMC.1996.601812","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601812","url":null,"abstract":"Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123316650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601798
A. A. Dadykin, A. Naumovets
We have carried out a comparative study of the low-field electron emission (LFEE) from a range of dielectric films such as a-C, i-C, ZnS, SiO/sub 2/ and some others. The results suggest the existence of a common mechanism governing LFEE from dielectric films on metals. It is concluded that the slope of the FN plots in the high-current (stable) range of LFEE depends on the shape of the interface (metal/dielectric) barrier as well as on the thickness and band structure of the film. In this case the "working region" of the emitter is not exposed to vacuum, which provides the high stability of LFEE even at mTorr pressures as found in our experiments.
{"title":"On the mechanism of stabilization of low-field electron emission from dielectric films on metals","authors":"A. A. Dadykin, A. Naumovets","doi":"10.1109/IVMC.1996.601798","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601798","url":null,"abstract":"We have carried out a comparative study of the low-field electron emission (LFEE) from a range of dielectric films such as a-C, i-C, ZnS, SiO/sub 2/ and some others. The results suggest the existence of a common mechanism governing LFEE from dielectric films on metals. It is concluded that the slope of the FN plots in the high-current (stable) range of LFEE depends on the shape of the interface (metal/dielectric) barrier as well as on the thickness and band structure of the film. In this case the \"working region\" of the emitter is not exposed to vacuum, which provides the high stability of LFEE even at mTorr pressures as found in our experiments.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123619746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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