{"title":"Heat-resistant Au-ZrB/sub x/-n-SiC 6H Schottky barriers","authors":"N. S. Boltovets, V. N. Ivanov, O.E. Rengevych","doi":"10.1109/CRMICO.2002.1137188","DOIUrl":null,"url":null,"abstract":"We present the results of our research into morphological and electrical properties of ZrB/sub x/-n-SiC 6H and Au-ZrB/sub x/-n-SiC 6H surface-barrier structures. They were studied both before and after a 90 s rapid thermal annealing (RTA) in vacuum at the temperature T=1000/spl deg/C. The ZrB/sub x/ films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that the RTA changed neither contact layered structure nor the abrupt character of the interface, and the contact barrier properties were retained. For the initial (pre-RTA) samples the Schottky barrier height /spl phi//sub B/ was 0.69-0.78 eV; post-RTA, it became 0.59-0.70 eV.","PeriodicalId":378024,"journal":{"name":"12th International Conference Microwave and Telecommunication Technology","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference Microwave and Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2002.1137188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present the results of our research into morphological and electrical properties of ZrB/sub x/-n-SiC 6H and Au-ZrB/sub x/-n-SiC 6H surface-barrier structures. They were studied both before and after a 90 s rapid thermal annealing (RTA) in vacuum at the temperature T=1000/spl deg/C. The ZrB/sub x/ films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that the RTA changed neither contact layered structure nor the abrupt character of the interface, and the contact barrier properties were retained. For the initial (pre-RTA) samples the Schottky barrier height /spl phi//sub B/ was 0.69-0.78 eV; post-RTA, it became 0.59-0.70 eV.
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