A Static Method for Analyzing Hotspot Distribution on the LSI

K. Miyase, Yudai Kawano, Shyue-Kung Lu, X. Wen, S. Kajihara
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Abstract

Performance degradation caused by high IR-drop in normal functional mode of LSI can be avoided by improving the power supply network in the layout design phase. However, while IR-drop increases much more in test mode than in normal functional mode, excessive IR-drop in test mode is not appropriately considered in the layout design phase. Excessive IR-drop in test mode causes over-testing, which wrongly determines a fault free LSI in normal functional mode to be faulty. In this work, we propose a method for analyzing high IR-drop areas (hotspot distribution), which is necessary to effectively and efficiently reduce excessive IR-drop.
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一种分析LSI上热点分布的静态方法
通过在布局设计阶段改进供电网络,可以避免LSI正常功能模式下高ir降导致的性能下降。然而,虽然测试模式下的ir下降比正常功能模式下的ir下降要大得多,但在布局设计阶段没有适当考虑测试模式下的过度ir下降。测试模式下ir降过高会导致过度测试,从而错误地将正常工作模式下的无故障LSI电路判断为故障。在这项工作中,我们提出了一种分析高红外下降区域(热点分布)的方法,这是有效和高效地减少过度红外下降所必需的。
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