Cell-based models for the switching statistics of RRAM

Abstract

Departing from the percolation model of dielectric breakdown, we establish a framework of analysis and modeling of the resistive switching statistics in RRAM. A deterministic model for the RESET dynamics based on the thermal dissolution of the conductive filament (CF) is incorporated into simple geometrical cell-based models to construct a complete physics-based analytical model for the RESET statistics. This model nicely accounts for the experimental VRESET and IRESET distributions in relation to the size of the CF in Pt/NiO/W devices.