{"title":"FEM based modeling of tunable BAW resonators with Ba0.8Sr0.2TiO3","authors":"Daw A. Asderah, T. Kalkur","doi":"10.1109/ISAF.2017.8000200","DOIUrl":null,"url":null,"abstract":"In this paper, a finite element method and multiphysics based 3D modeling of tunable ferroelectric thin film resonator taking the advantages of electrostrictive and piezoelectric effects of Ba0.8Sr0.2TiO3 thin film. DC electrical field dependency of the dielectric permittivity and elasticity coefficients can control the resonances in the thin film. The resonator has a series resonant frequency of 4.33 GHz and parallel resonance at 4.43 GHz with applied DC voltage of 2 V. The electromechanical coupling coefficient is measured at 5.4% and increased to be 8% with the biasing voltage at 8V.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2017.8000200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, a finite element method and multiphysics based 3D modeling of tunable ferroelectric thin film resonator taking the advantages of electrostrictive and piezoelectric effects of Ba0.8Sr0.2TiO3 thin film. DC electrical field dependency of the dielectric permittivity and elasticity coefficients can control the resonances in the thin film. The resonator has a series resonant frequency of 4.33 GHz and parallel resonance at 4.43 GHz with applied DC voltage of 2 V. The electromechanical coupling coefficient is measured at 5.4% and increased to be 8% with the biasing voltage at 8V.
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