2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)最新文献
Pub Date : 2017-05-07DOI: 10.1109/ISAF.2017.8000199
Hamad G. Alrwuili, T. Kalkur
This paper presents an investigation into a tunable dual-band bandstop filter (DBBSF) using a novel structure compacting a spurline section with a stepped impedance resonator. This new structure creates one new compact filter by combining two traditional controllable methodologies. This compact filter consists of a spurline section and stepped impedance resonator designed at 2 GHz and 3.5 GHz respectively. This filter was loaded with a Ferroelectric capacitor to tune their frequency response. The center frequency of the first band can be tuned from 1.9 GHz to 2 GHz by loading a ferroelectric capacitor to the spurline section and applying a DC control voltage from 0V to 6V. By embedding the stepped impedance resonator with a similar capacitor, the center frequency of the second band can be tuned from 3.2 GHz to 3.6 GHz with the same voltage. The new structure filter will combine a spurline section with a stepped impedance resonator in one filter realizing two independent rejection bands. This kind of filter provides two comparable technologies for dual band filters. It can be used for two different tuned elements with different RF frequencies and bandwidths.
{"title":"A novel compact dual-band bandstop filter (DBBSF) using spurline & stepped-impedance resonator with a tunable BST capacitors","authors":"Hamad G. Alrwuili, T. Kalkur","doi":"10.1109/ISAF.2017.8000199","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000199","url":null,"abstract":"This paper presents an investigation into a tunable dual-band bandstop filter (DBBSF) using a novel structure compacting a spurline section with a stepped impedance resonator. This new structure creates one new compact filter by combining two traditional controllable methodologies. This compact filter consists of a spurline section and stepped impedance resonator designed at 2 GHz and 3.5 GHz respectively. This filter was loaded with a Ferroelectric capacitor to tune their frequency response. The center frequency of the first band can be tuned from 1.9 GHz to 2 GHz by loading a ferroelectric capacitor to the spurline section and applying a DC control voltage from 0V to 6V. By embedding the stepped impedance resonator with a similar capacitor, the center frequency of the second band can be tuned from 3.2 GHz to 3.6 GHz with the same voltage. The new structure filter will combine a spurline section with a stepped impedance resonator in one filter realizing two independent rejection bands. This kind of filter provides two comparable technologies for dual band filters. It can be used for two different tuned elements with different RF frequencies and bandwidths.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115282986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-07DOI: 10.1109/ISAF.2017.8000215
T. Meurisse, Dragan Damjanovic
Ferroelectric ceramics and crystals are the main component of many acoustic transducers based on piezoelectric effect. These materials exhibit different types of losses (dielectric, mechanical or coupled, piezoelectric “losses”) which may have strong effect on the resonances of its impedance.
{"title":"Modeling losses of a piezoelectric resonator: Analytical vs finite elements analysis","authors":"T. Meurisse, Dragan Damjanovic","doi":"10.1109/ISAF.2017.8000215","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000215","url":null,"abstract":"Ferroelectric ceramics and crystals are the main component of many acoustic transducers based on piezoelectric effect. These materials exhibit different types of losses (dielectric, mechanical or coupled, piezoelectric “losses”) which may have strong effect on the resonances of its impedance.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130955901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-07DOI: 10.1109/ISAF.2017.8000198
A. Alateeq, T. Kalkur
Ferroelectric capacitors based on thin films such as lead zirconate Titanate(PZT) and strontium bismuth titanate (SBT) have capacitance density and significant spontaneous polarization. DC-DC switching polarization switching converter is presented in this paper with the utilization of ferroelectric capacitor. The topology used in this converter is series and parallel which is analyzed using calculations, simulation and experimental results. The performance of these converters are compared with linear capacitors. Due to polarization switching, these converters show better performance in terms of higher output power compared to linear capacitors.
{"title":"Step up switching capacitor DC-to-DC converter using ferroelectric capacitor","authors":"A. Alateeq, T. Kalkur","doi":"10.1109/ISAF.2017.8000198","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000198","url":null,"abstract":"Ferroelectric capacitors based on thin films such as lead zirconate Titanate(PZT) and strontium bismuth titanate (SBT) have capacitance density and significant spontaneous polarization. DC-DC switching polarization switching converter is presented in this paper with the utilization of ferroelectric capacitor. The topology used in this converter is series and parallel which is analyzed using calculations, simulation and experimental results. The performance of these converters are compared with linear capacitors. Due to polarization switching, these converters show better performance in terms of higher output power compared to linear capacitors.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"297 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116253557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-07DOI: 10.1109/ISAF.2017.8000214
S. Matsuo, T. Yamada, M. Yoshino, T. Nagasaki, T. Kamo, H. Funakubo
Recently, electrocaloric (EC) effect in ferroelectric thin films has been intensively studied for emerging cooling devices. The pyroelectric coefficient, which mainly determines the magnitude of the EC effect, depends not only on the temperature but also on the applied electric field. Therefore, we investigated the influence of the electric field on the EC effect in a Ba0.5Sr0.5TiO3 thin film fabricated on SrRuO3/SrTiO3 (001) substrate. It was found that the temperature showing the largest EC effect, Tmax, increased with the electric field change ΔE when ΔE was below 115 kV/cm. However, it decreased with further ΔE. The observed tendency was different from the theoretical prediction.
{"title":"Nonlinear electric field dependence of electrocaloric effect in (001)-epitaxial (Ba, Sr) TiO3 thin films","authors":"S. Matsuo, T. Yamada, M. Yoshino, T. Nagasaki, T. Kamo, H. Funakubo","doi":"10.1109/ISAF.2017.8000214","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000214","url":null,"abstract":"Recently, electrocaloric (EC) effect in ferroelectric thin films has been intensively studied for emerging cooling devices. The pyroelectric coefficient, which mainly determines the magnitude of the EC effect, depends not only on the temperature but also on the applied electric field. Therefore, we investigated the influence of the electric field on the EC effect in a Ba<inf>0.5</inf>Sr<inf>0.5</inf>TiO<inf>3</inf> thin film fabricated on SrRuO<inf>3</inf>/SrTiO<inf>3</inf> (001) substrate. It was found that the temperature showing the largest EC effect, T<inf>max</inf>, increased with the electric field change ΔE when ΔE was below 115 kV/cm. However, it decreased with further ΔE. The observed tendency was different from the theoretical prediction.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116773454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-07DOI: 10.1109/ISAF.2017.8000203
Xiukai Cai, Xiaobo Sun, Lufeng Pang
Bismuth-nickel-niobium oxide based ceramics have been prepared by conventional solid state reaction technique. The structure and dielectric properties in this ternary oxide system have been investigated by X-ray diffraction analyses and temperature dependences of dielectric constant and loss factor measured at a wide range of frequencies (1 kHz to 100 kHz). Along the Bi2O3:Nb2O5=1∶1 composition line, there exist main phase of cubic pyrochlore type structure, and some other impurity phases common to vast range of selected compositions. Besides the low temperature dielectric relaxation found in the liquid nitrogen temperatures, another dielectric loss peak occurs at higher temperature. The estimated activation energy is of approximately 0.50 eV, and can be related to the loss arising from conduction process of the impurities and the defects.
{"title":"The structure and dielectric properties of bismuth-nickel-niobium oxide based ceramics","authors":"Xiukai Cai, Xiaobo Sun, Lufeng Pang","doi":"10.1109/ISAF.2017.8000203","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000203","url":null,"abstract":"Bismuth-nickel-niobium oxide based ceramics have been prepared by conventional solid state reaction technique. The structure and dielectric properties in this ternary oxide system have been investigated by X-ray diffraction analyses and temperature dependences of dielectric constant and loss factor measured at a wide range of frequencies (1 kHz to 100 kHz). Along the Bi2O3:Nb2O5=1∶1 composition line, there exist main phase of cubic pyrochlore type structure, and some other impurity phases common to vast range of selected compositions. Besides the low temperature dielectric relaxation found in the liquid nitrogen temperatures, another dielectric loss peak occurs at higher temperature. The estimated activation energy is of approximately 0.50 eV, and can be related to the loss arising from conduction process of the impurities and the defects.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114717963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-07DOI: 10.1109/ISAF.2017.8000220
Mitsue Takahashi, Wei Zhang, S. Sakai
An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N2-dominant-gas annealing process was effective for improving the ferroelectricity of the CaxSr1−xBi2Ta2O9 (CSBT) in Ir/CSBT/HfO2/Si FETs.
{"title":"Precise understanding of ferroelectric properties in metal/ferroelectric/insulator/semiconductor FETs with (Ca,Sr)Bi2Ta2O9","authors":"Mitsue Takahashi, Wei Zhang, S. Sakai","doi":"10.1109/ISAF.2017.8000220","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000220","url":null,"abstract":"An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N<inf>2</inf>-dominant-gas annealing process was effective for improving the ferroelectricity of the Ca<inf>x</inf>Sr<inf>1−x</inf>Bi<inf>2</inf>Ta<inf>2</inf>O<inf>9</inf> (CSBT) in Ir/CSBT/HfO<inf>2</inf>/Si FETs.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114732121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000205
Xia Di, P. Muralt
This paper discusses preparation and characterizations of LaNiO3 (LNO) films deposited by RF magnetron sputtering on SiO2/Si and Pt/Ti/SiO2/Si substrates. Crystallinity and texture were influenced by the sputtering gas pressure and composition (Ar and O2), and the growth substrate. LNO films deposited at 6.4 mTorr with an Ar/O2 flow ratio of 100/15 sccm showed the best (100) texture, and the lowest resistivity of 0.41 mΩ·cm after annealing. As seed layer for Pb(Zr0.52Ti0.48)O3 (PZT) growth, LNO passes its texture to the PZT film, in as much as the (110)/(100) texture ratio was the same in both.
{"title":"Highly (100)-oriented metallic LaNiO3 grown by RF magnetron sputtering","authors":"Xia Di, P. Muralt","doi":"10.1109/ISAF.2017.8000205","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000205","url":null,"abstract":"This paper discusses preparation and characterizations of LaNiO<inf>3</inf> (LNO) films deposited by RF magnetron sputtering on SiO<inf>2</inf>/Si and Pt/Ti/SiO<inf>2</inf>/Si substrates. Crystallinity and texture were influenced by the sputtering gas pressure and composition (Ar and O<inf>2</inf>), and the growth substrate. LNO films deposited at 6.4 mTorr with an Ar/O<inf>2</inf> flow ratio of 100/15 sccm showed the best (100) texture, and the lowest resistivity of 0.41 mΩ·cm after annealing. As seed layer for Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf> (PZT) growth, LNO passes its texture to the PZT film, in as much as the (110)/(100) texture ratio was the same in both.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124324196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000206
M. Gorostiaga, M. Wapler, U. Wallrabe
In this paper, we experimentally verify the difference between the zero reflection condition and the power maximization approach for the optimal electric loads. First, we predict those optimal loads with the KLM model for a 1–3 composite transducer that we use as a receiver, and we then perform experiments in deionized water with different ohmic loads attached to it. The measurements confirm that the electric loads that achieve the highest efficiency of the receiver are not equal to the loads that minimize the reflections.
{"title":"On the optimal electric loads for ultrasound energy receivers","authors":"M. Gorostiaga, M. Wapler, U. Wallrabe","doi":"10.1109/ISAF.2017.8000206","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000206","url":null,"abstract":"In this paper, we experimentally verify the difference between the zero reflection condition and the power maximization approach for the optimal electric loads. First, we predict those optimal loads with the KLM model for a 1–3 composite transducer that we use as a receiver, and we then perform experiments in deionized water with different ohmic loads attached to it. The measurements confirm that the electric loads that achieve the highest efficiency of the receiver are not equal to the loads that minimize the reflections.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133952634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000222
Y. Tong, H. Talebinezhad, Xu Lu, Zhongyang Cheng
A ceramic-glass composite with high dielectric constant is fabricated by using vacuum pretreated BaTiO3 nanoparticles and SiO2 glass coating layers, the effect of process and microstructure on the dielectric properties of the composites was investigated. As the content of glass coated on BaTiO3 particles is increasing, the composites are showing the decreasing dielectric constant, decreasing dielectric loss and increasing breakdown. When the composite with 2.5 wt.% SiO2 was sintered at 1230 °C, its energy density reached a maximum value of 1.66 J/cm3. The produced composite disks are showing a high dielectric constant of 3000 and a low dielectric loss of 0.03 at the testing frequency of 100 Hz. A better dielectric stability with changing temperature were also achieved, which also makes the materials potential for a variety of applications.
{"title":"Process and microstructure to achieve high dielectric constant in ceramic-glass composites for energy storage applications","authors":"Y. Tong, H. Talebinezhad, Xu Lu, Zhongyang Cheng","doi":"10.1109/ISAF.2017.8000222","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000222","url":null,"abstract":"A ceramic-glass composite with high dielectric constant is fabricated by using vacuum pretreated BaTiO3 nanoparticles and SiO2 glass coating layers, the effect of process and microstructure on the dielectric properties of the composites was investigated. As the content of glass coated on BaTiO3 particles is increasing, the composites are showing the decreasing dielectric constant, decreasing dielectric loss and increasing breakdown. When the composite with 2.5 wt.% SiO2 was sintered at 1230 °C, its energy density reached a maximum value of 1.66 J/cm3. The produced composite disks are showing a high dielectric constant of 3000 and a low dielectric loss of 0.03 at the testing frequency of 100 Hz. A better dielectric stability with changing temperature were also achieved, which also makes the materials potential for a variety of applications.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122250785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.1109/ISAF.2017.8000213
S. Mansour, A. Eid, L. A. El-Latif, M. Rashad, S. Ducharme, M. Afifi, J. Turner
Gadolinium-doped lead lanthanum zirconate titanate (Pb0.94−xGdxLa0.06)(Zr0.52Ti0.48)O3: PLGZT ceramics with x= 0, 2, 4, 6, and 8% have been successfully fabricated using a sol-gel auto-combustion method. Pure perovskite PLGZT was acquired for the powder calcined at 850 °C for 3h. In addition, the manipulation of Gd3+-substituted PLZT on the microstructure, ferroelectric and mechanical properties was systematically considered. We have executed a deep structural analysis of X-ray powder diffraction data of PLGZT near the morphotropic phase boundary (MPB). The tetragonal and rhombohedral phases were found to coexist at room temperature. The remanent polarization Pr and coercive field Ec were calculated from the polarization hysteresis loops. The elastic constants were determined for the samples by ultrasonic wave propagation to determine the elastic behavior of the dopant on the PLZT matrix. The results showed that Gd doping in the A-site of the ABO3 perovskite system improves the hysteresis behavior. In the same manner, Gd doping was seen to enhance the mechanical properties.
{"title":"Structure, ferroelectric and mechanical performance of polycrystalline gadolinium-doped lead lanthanum zirconate titanate ceramics","authors":"S. Mansour, A. Eid, L. A. El-Latif, M. Rashad, S. Ducharme, M. Afifi, J. Turner","doi":"10.1109/ISAF.2017.8000213","DOIUrl":"https://doi.org/10.1109/ISAF.2017.8000213","url":null,"abstract":"Gadolinium-doped lead lanthanum zirconate titanate (Pb<inf>0.94−x</inf>Gd<inf>x</inf>La<inf>0.06</inf>)(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf>: PLGZT ceramics with x= 0, 2, 4, 6, and 8% have been successfully fabricated using a sol-gel auto-combustion method. Pure perovskite PLGZT was acquired for the powder calcined at 850 °C for 3h. In addition, the manipulation of Gd<sup>3+</sup>-substituted PLZT on the microstructure, ferroelectric and mechanical properties was systematically considered. We have executed a deep structural analysis of X-ray powder diffraction data of PLGZT near the morphotropic phase boundary (MPB). The tetragonal and rhombohedral phases were found to coexist at room temperature. The remanent polarization P<inf>r</inf> and coercive field E<inf>c</inf> were calculated from the polarization hysteresis loops. The elastic constants were determined for the samples by ultrasonic wave propagation to determine the elastic behavior of the dopant on the PLZT matrix. The results showed that Gd doping in the A-site of the ABO<inf>3</inf> perovskite system improves the hysteresis behavior. In the same manner, Gd doping was seen to enhance the mechanical properties.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"40 1-8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116506410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)
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