{"title":"The current state of the development and research of type II superlattices for infrared photodetective devices (a review)","authors":"","doi":"10.51368/2307-4469-2021-9-2-97-111","DOIUrl":null,"url":null,"abstract":"The main properties of type II superlattices (T2SL) are considered. The description of various heterojunction types and energy conditions of their realization is given. The results of theoretical and experimental studies of optical and electrical proper-ties of T2SLs based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb are presented. Based on the results of qualitative analysis and evaluation of the characteristics of T2SL relative to classical semiconductor compounds used in infrared photoelectronics (HgCdTe, InSb and QWIP structures), the advantages and disad-vantages of T2SL are identified and described.A comparison of type II superlattices based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb was carried out, the results of which showed the prospects of T2SL applications in the manufacturing state-of-art and promising infrared photodetectors","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ADVANCES IN APPLIED PHYSICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.51368/2307-4469-2021-9-2-97-111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The main properties of type II superlattices (T2SL) are considered. The description of various heterojunction types and energy conditions of their realization is given. The results of theoretical and experimental studies of optical and electrical proper-ties of T2SLs based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb are presented. Based on the results of qualitative analysis and evaluation of the characteristics of T2SL relative to classical semiconductor compounds used in infrared photoelectronics (HgCdTe, InSb and QWIP structures), the advantages and disad-vantages of T2SL are identified and described.A comparison of type II superlattices based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb was carried out, the results of which showed the prospects of T2SL applications in the manufacturing state-of-art and promising infrared photodetectors
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