Jinbao Wei, Haigang Yang, Hongguang Sun, Z. Lin, S. Xia
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引用次数: 2
Abstract
ISFET is a potentiometric sensor that is easily adapted for a wide range of chemical, biochemical and biomedical measurements. This article presents an ISFET sensor system-on-chip including the ISFET/REFET (reference FET) pair and ISFET/REFET amplifiers, bias current generator, as well as a reference electrode structure, all integrated on the same chip based on CMOS technology. The sensor chip is fabricated in a standard 0.35/spl mu/m 4-metal and 2-poly layer CMOS process (chartered semiconductor) to which extra post processing steps are added for depositing membranes. The chip operates at 3.3V and the total die area is 5 mm. Finally the performance of the integrated sensor interface circuit is measured and analyzed.
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