{"title":"Electrical characterization of MOSIS-fabricated circuit elements","authors":"C. M. Stillo, R. Fox, D. Langford, D. J. Ferris","doi":"10.1109/UGIM.1991.148131","DOIUrl":null,"url":null,"abstract":"SPICE parameters and other data useful for analog design were determined for the MOSIS 2 mu m-double-metal double-poly p-well process. The channel-length modulation parameter LAMBDA and noise parameter KF were extracted for various sizes of n- and p-type MOSFETs with poly1 and poly2 gates. the zero-bias threshold voltage, bulk threshold parameters, saturation transconductance, lateral diffusion, and width correction of poly2 transistors were extracted. A vertical bipolar transistor is characterized.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UGIM.1991.148131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
SPICE parameters and other data useful for analog design were determined for the MOSIS 2 mu m-double-metal double-poly p-well process. The channel-length modulation parameter LAMBDA and noise parameter KF were extracted for various sizes of n- and p-type MOSFETs with poly1 and poly2 gates. the zero-bias threshold voltage, bulk threshold parameters, saturation transconductance, lateral diffusion, and width correction of poly2 transistors were extracted. A vertical bipolar transistor is characterized.<>
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