Tin whisker growth under cycling current pulse

B. Jiang, A. Xian
{"title":"Tin whisker growth under cycling current pulse","authors":"B. Jiang, A. Xian","doi":"10.1109/HDP.2006.1707607","DOIUrl":null,"url":null,"abstract":"A new test method, called as cycling current pulse method, was developed to evaluate the trend of whisker growth, which the cycling current pulse was first applied for cyclical heating and cooling on the tin coating sample in order to accelerate the whisker growth. The loading current in samples was controlled by the device composed of alpha-simple applied controller and a constant current source, and the working current density varied from 5 times 104A/dm2 to 10 times 104A/dm2. It resulted in temperature of the samples varied from 40 degC to 75 degC, and both heating and cooling dwell time per cycle were 5 min, 0-2200 cycles (about 15 days) were carried out in present work. Tin whisker growth on surface finish is observed by SEM after different cycles; the results showed that the longest fluted whisker about 120 microns in length was observed after 2200 cycles current pulse test. As a comparison with the isothermal condition, there was a relative short incubation period in cycling current pulse test at current density 5 times 104A/dm2. However, at current density of 10 times 104A/dm2, whisker growth was slowdown, the reason is not clear now. Present work shows that the cycling current pulse method is effective to evaluate the trend of whisker growth","PeriodicalId":406794,"journal":{"name":"Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HDP.2006.1707607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A new test method, called as cycling current pulse method, was developed to evaluate the trend of whisker growth, which the cycling current pulse was first applied for cyclical heating and cooling on the tin coating sample in order to accelerate the whisker growth. The loading current in samples was controlled by the device composed of alpha-simple applied controller and a constant current source, and the working current density varied from 5 times 104A/dm2 to 10 times 104A/dm2. It resulted in temperature of the samples varied from 40 degC to 75 degC, and both heating and cooling dwell time per cycle were 5 min, 0-2200 cycles (about 15 days) were carried out in present work. Tin whisker growth on surface finish is observed by SEM after different cycles; the results showed that the longest fluted whisker about 120 microns in length was observed after 2200 cycles current pulse test. As a comparison with the isothermal condition, there was a relative short incubation period in cycling current pulse test at current density 5 times 104A/dm2. However, at current density of 10 times 104A/dm2, whisker growth was slowdown, the reason is not clear now. Present work shows that the cycling current pulse method is effective to evaluate the trend of whisker growth
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循环电流脉冲下锡晶须的生长
提出了一种新的测试方法——循环电流脉冲法来评估晶须的生长趋势,该方法首先采用循环电流脉冲对锡涂层样品进行循环加热和冷却,以加速晶须的生长。通过α -简单应用控制器和恒流源组成的装置控制样品中的负载电流,工作电流密度在5倍104A/dm2到10倍104A/dm2之间变化。结果表明,样品的温度在40℃~ 75℃之间变化,每个循环的加热和冷却停留时间均为5 min,本工作进行了0 ~ 2200个循环(约15天)。通过扫描电镜观察了不同循环次数后表面表面的锡晶须生长情况;结果表明,经过2200次脉冲电流测试,可获得长度为120微米的最长凹槽晶须。与等温条件相比,电流密度为5倍104A/dm2的循环电流脉冲试验潜伏期相对较短。但在电流密度为104A/dm2的10倍时,晶须生长缓慢,原因尚不清楚。研究表明,循环电流脉冲法是评价晶须生长趋势的有效方法
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