A 0.35 /spl mu/m CMOS based smart power technology for 7 V-50 V applications

V. Parthasarathy, R. Zhu, M. Ger, V. Khemka, A. Bose, R. Baird, T. Roggenbauer, D. Collins, S. Chang, P. Hui, M. Zunino
{"title":"A 0.35 /spl mu/m CMOS based smart power technology for 7 V-50 V applications","authors":"V. Parthasarathy, R. Zhu, M. Ger, V. Khemka, A. Bose, R. Baird, T. Roggenbauer, D. Collins, S. Chang, P. Hui, M. Zunino","doi":"10.1109/ISPSD.2000.856834","DOIUrl":null,"url":null,"abstract":"This paper describes a 0.35 /spl mu/m smart power technology that enables integration of a diverse set of analog and high-voltage power components in a 0.35 /spl mu/m CMOS logic platform for a broad range of voltage applications from 7 V to 50 V.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

This paper describes a 0.35 /spl mu/m smart power technology that enables integration of a diverse set of analog and high-voltage power components in a 0.35 /spl mu/m CMOS logic platform for a broad range of voltage applications from 7 V to 50 V.
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基于CMOS的智能电源技术,适用于7 V-50 V的应用
本文介绍了一种0.35 /spl mu/m的智能电源技术,该技术能够在0.35 /spl mu/m的CMOS逻辑平台上集成各种模拟和高压电源组件,适用于从7 V到50 V的广泛电压应用。
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