Mosfets used in ideal diode circuits for Lundell alternator rectifiers

A. V. Bossche, S. Haddad, D. Petrov, V. Valchev
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引用次数: 1

Abstract

Low voltage power applications suffer from losses in diode voltage drops. For example, the Lundell car alternator has a low efficiency, partly due to a high-current diode voltage drop of 1.1V, being 2.2V in a bridge configuration, resulting in 15% of output voltage and corresponding losses. Schottky diodes have a lower drop, but are quite fragile and seem not to be preferred in that application. This paper proposes a two terminal circuit with a MOSFET, which emulates a diode while having a very low voltage drop. The main item is that the MOSFET is turned on at a small negative drain-source voltage. This could be done using an op-amp circuit, but the used transistor array circuit can have a lower current consumption. At full load, some 73% voltage drop reduction is possible, for example while using a MOSFET of max. 0.003 ohm on-resistance at 125°C, hence the voltage drop at 100 A can be limited to 0.3 V. At a rather typical 30A DC-current load, some 87% voltage drop reduction is possible, 100mV drop compared to 0.8V for a diode. The solution costs hardly more than the usual “press-fit” diodes. The circuit has a short paid back time, by the lower use of aluminum for the heat sink and the fuel saving. In large quantity such MOSFET can cost less than 0.5 Euro, and the cost of the circuit is not larger.
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用于伦德尔交流整流器的理想二极管电路的mosfet
低压电源应用受到二极管电压降损失的影响。例如,Lundell汽车交流发电机的效率很低,部分原因是由于大电流二极管电压降为1.1V,在桥式配置中为2.2V,导致输出电压下降15%并产生相应的损失。肖特基二极管有一个较低的下降,但相当脆弱,似乎不是首选在该应用。本文提出了一种具有MOSFET的双端电路,它可以模拟二极管,同时具有非常低的压降。主要项目是MOSFET在一个小的负漏源电压下接通。这可以使用运算放大器电路来完成,但使用晶体管阵列电路可以具有更低的电流消耗。在满载时,可以将电压降降低约73%,例如使用最大的MOSFET。在125°C时的导通电阻为0.003欧姆,因此在100 A时的电压降可以限制在0.3 V。在一个相当典型的30A直流电流负载下,大约87%的电压降降低是可能的,与0.8V的二极管相比,电压降为100mV。该解决方案的成本几乎不超过通常的“压合”二极管。该电路的回收期短,散热器铝的用量少,节省了燃料。大批量生产这种MOSFET的成本可以低于0.5欧元,而且电路成本也不会更大。
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