A Refined Electrical Model for Particle Strikes and its Impact on SEU Prediction

S. Hellebrand, Christian G. Zoellin, H. Wunderlich, S. Ludwig, Torsten Coym, B. Straube
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引用次数: 13

Abstract

Decreasing feature sizes have led to an increased vulnerability of random logic to soft errors. A particle strike may cause a glitch or single event transient (SET) at the output of a gate, which in turn can propagate to a register and cause a single event upset (SEU) there. Circuit level modeling and analysis of SETs provides an attractive compromise between computationally expensive simulations at device level and less accurate techniques at higher levels. At the circuit level particle strikes crossing a pn-junction are traditionally modeled with the help of a transient current source. However, the common models assume a constant voltage across the pn-junction, which may lead to inaccurate predictions concerning the shape of expected glitches. To overcome this problem, a refined circuit level model for strikes through pn-junctions is investigated and validated in this paper. The refined model yields significantly different results than common models. This has a considerable impact on SEU prediction, which is confirmed by extensive simulations at gate level. In most cases, the refined, more realistic, model reveals an almost doubled risk of a system failure after an SET.
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粒子撞击的精细化电模型及其对SEU预测的影响
特征尺寸的减小导致随机逻辑对软错误的脆弱性增加。粒子撞击可能在门的输出端引起故障或单事件瞬态(SET),这反过来又可以传播到寄存器并在那里引起单事件扰动(SEU)。set的电路级建模和分析在器件级计算昂贵的模拟和更高级别的不太精确的技术之间提供了一个有吸引力的折衷。在电路层面,粒子穿过pn结的冲击通常借助于瞬态电流源进行建模。然而,通常的模型假设在pn结上有一个恒定的电压,这可能导致对预期故障形状的不准确预测。为了克服这一问题,本文研究并验证了通过pn结的击击的改进电路级模型。改进后的模型与普通模型的结果有很大不同。这对SEU的预测有相当大的影响,这在门级的大量模拟中得到了证实。在大多数情况下,改进的、更现实的模型显示,SET后系统故障的风险几乎增加了一倍。
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