On introducing of state number density function for discrete energy level quantum dot transistor

Abstract

Valuable progress has been made in the area of nanotechnology, but for the further advancement of atom scale devices, results and theories need to be more precise, and have a solid fundamental basis. This paper presents the improved theory in accuracy for discrete energy level quantum dot transistors. The wave packet transition model is suggested, allowing the introduction of the state number density function, and the derived results make clear why the quantum resistance based on the uncertainty principle appears in this problem. Since quantum resistance causes no energy dissipation, the relaxation process is newly considered to explain the dissipation. The potential parameters which should be applied to the quantum model of the quantum dot transistor are derived from the fundamental classical capacitance model of the transistor, and make clear the relation between the circuit voltages in the classical model and the internal potentials in the quantum model. The theory in this paper contains the orthodox theory as a special case, and the characteristics of the discrete energy level dual quantum dot transistor are analyzed.