Pub Date : 2013-12-01DOI: 10.1109/NANO.2013.6720796
S. M. Yang, G. Sheu
This work aims at improving the energy harvester performance by using low-dimensional thermoelectric materials. A micro-thermoelectric generator with quantum well thermocouples is developed by state-of-the-art CMOS (Complementary metal-oxide semiconductor) process. A relaxation-time model is applied to analyze the characteristic length of silicon germanium quantum well, and a thermal model is also applied to calculate the thermocouple size for optimal performance by matching the thermal/electrical resistance. Analysis based on TSMC 0.35μm 3P3M (3-poly and 3-metal layers) BiCMOS process shows that the quantum well thermocouples (0.05 μm Si0.9Ge0.1 quantum well on 0.300 μm P-thermoleg and 0.280 μm N-thermoleg) has the best performance. that the power factor and voltage factor is 0.241 μW/cm2K2 and 10.442 V/cm2K.
{"title":"Design of quantum well thermoelectric energy harvester by CMOS process","authors":"S. M. Yang, G. Sheu","doi":"10.1109/NANO.2013.6720796","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720796","url":null,"abstract":"This work aims at improving the energy harvester performance by using low-dimensional thermoelectric materials. A micro-thermoelectric generator with quantum well thermocouples is developed by state-of-the-art CMOS (Complementary metal-oxide semiconductor) process. A relaxation-time model is applied to analyze the characteristic length of silicon germanium quantum well, and a thermal model is also applied to calculate the thermocouple size for optimal performance by matching the thermal/electrical resistance. Analysis based on TSMC 0.35μm 3P3M (3-poly and 3-metal layers) BiCMOS process shows that the quantum well thermocouples (0.05 μm Si0.9Ge0.1 quantum well on 0.300 μm P-thermoleg and 0.280 μm N-thermoleg) has the best performance. that the power factor and voltage factor is 0.241 μW/cm2K2 and 10.442 V/cm2K.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121411417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/NANO.2013.6720810
Chun-Yu Lin, Li-Wei Chu, Shiang-Yu Tsai, M. Ker, Ming-Hsiang Song, C. Jou, T. Lu, J. Tseng, M. Tsai, T. Hsu, P. Hung, Y. Wei, T. Chang
Nanoscale CMOS technologies have been used to implement the radio-frequency integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness of IC products. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection on circuit performances, ESD protection at input/output pads must be carefully designed. In this work, a new proposed ESD protection design has been realized in a nanoscale CMOS process. Experimental results of the test circuits have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.
{"title":"ESD protection design for radio-frequency integrated circuits in nanoscale CMOS technology","authors":"Chun-Yu Lin, Li-Wei Chu, Shiang-Yu Tsai, M. Ker, Ming-Hsiang Song, C. Jou, T. Lu, J. Tseng, M. Tsai, T. Hsu, P. Hung, Y. Wei, T. Chang","doi":"10.1109/NANO.2013.6720810","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720810","url":null,"abstract":"Nanoscale CMOS technologies have been used to implement the radio-frequency integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness of IC products. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection on circuit performances, ESD protection at input/output pads must be carefully designed. In this work, a new proposed ESD protection design has been realized in a nanoscale CMOS process. Experimental results of the test circuits have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130641035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-05DOI: 10.1109/NANO.2013.6720897
A. Kaul, J. Coles, K. Megerian, M. Eastwood, R. Green, P. Bandaru
Optical absorbers based on vertically aligned multi-walled carbon nanotubes (MWCNTs), synthesized using electric-field assisted growth, are described here that show an ultra-low reflectance, 100X lower compared to Au-black from wavelength λ ~ 350 nm - 2.5 μm. A bi-metallic Co/Ti layer was shown to catalyze a high site density of MWCNTs on metallic substrates and the optical properties of the absorbers were engineered by controlling the bottom-up synthesis conditions using dc plasma-enhanced chemical vapor deposition (PECVD). Reflectance measurements on the MWCNT absorbers after heating them in air to 400°C showed negligible changes in reflectance which was still low, ~0.022 % at λ ~ μm. In contrast, the percolated structure of the reference Aublack samples collapsed completely after heating, causing the optical response to degrade at temperatures as low as 200°C. The high optical absorption efficiency of the MWCNT absorbers, synthesized on metallic substrates, over a broad spectral range, coupled with their thermal ruggedness, suggests they have promise in solar energy harnessing applications, as well as thermal detectors for radiometry.
{"title":"A bottom-up engineered broadband optical nanoabsorber for radiometry and energy and harnessing applications","authors":"A. Kaul, J. Coles, K. Megerian, M. Eastwood, R. Green, P. Bandaru","doi":"10.1109/NANO.2013.6720897","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720897","url":null,"abstract":"Optical absorbers based on vertically aligned multi-walled carbon nanotubes (MWCNTs), synthesized using electric-field assisted growth, are described here that show an ultra-low reflectance, 100X lower compared to Au-black from wavelength λ ~ 350 nm - 2.5 μm. A bi-metallic Co/Ti layer was shown to catalyze a high site density of MWCNTs on metallic substrates and the optical properties of the absorbers were engineered by controlling the bottom-up synthesis conditions using dc plasma-enhanced chemical vapor deposition (PECVD). Reflectance measurements on the MWCNT absorbers after heating them in air to 400°C showed negligible changes in reflectance which was still low, ~0.022 % at λ ~ μm. In contrast, the percolated structure of the reference Aublack samples collapsed completely after heating, causing the optical response to degrade at temperatures as low as 200°C. The high optical absorption efficiency of the MWCNT absorbers, synthesized on metallic substrates, over a broad spectral range, coupled with their thermal ruggedness, suggests they have promise in solar energy harnessing applications, as well as thermal detectors for radiometry.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131630744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-05DOI: 10.1109/NANO.2013.6720886
C. Cheah, X. Li, X. Yan, D. Sun
Optical tweezer is a useful tool for non-contact micromanipulation tasks because it can manipulate biological cells precisely without causing damage to the cells. In many optical manipulation techniques, the measurement of the velocity of the cell is necessary. Since it is difficult to measure the velocity of the cell, the velocity information is usually obtained by differentiating the position of the cell in image space, which may result in degraded performance of the control system due to estimation error and the noises induced in differentiation. In this paper, an adaptive observer technique is proposed for optical manipulation of cell with a low Reynolds' number, without measurement of the velocity of the cell. By using the proposed observer technique, a desired position input of the laser beam without measurement of the velocity of the cell is also developed. The stability of closed-loop system is analyzed by using Lyapunov-like method. Experimental results are presented to illustrate the performance of the proposed control method.
{"title":"Optical manipulation of biological cell without measurement of cell velocity","authors":"C. Cheah, X. Li, X. Yan, D. Sun","doi":"10.1109/NANO.2013.6720886","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720886","url":null,"abstract":"Optical tweezer is a useful tool for non-contact micromanipulation tasks because it can manipulate biological cells precisely without causing damage to the cells. In many optical manipulation techniques, the measurement of the velocity of the cell is necessary. Since it is difficult to measure the velocity of the cell, the velocity information is usually obtained by differentiating the position of the cell in image space, which may result in degraded performance of the control system due to estimation error and the noises induced in differentiation. In this paper, an adaptive observer technique is proposed for optical manipulation of cell with a low Reynolds' number, without measurement of the velocity of the cell. By using the proposed observer technique, a desired position input of the laser beam without measurement of the velocity of the cell is also developed. The stability of closed-loop system is analyzed by using Lyapunov-like method. Experimental results are presented to illustrate the performance of the proposed control method.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127096447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721049
Y. Pan, D. Li, X. Zhao
For the various nano-fluidic based biomedical applications, the study of the drag of fluid flow is of interest. Among which, the study of boundary slip is one of the most important and popular issues. Hydrophobic surfaces, which are believed to have a slip length, play an important role in the fluidic applications. There are various methods to measure slip length on hydrophobic surface. This paper induces an improved method based on atomic force microscope (AFM) in contact mode.
{"title":"An improved method for measuring boundary slip on hydrophobic surface with atomic force microscope","authors":"Y. Pan, D. Li, X. Zhao","doi":"10.1109/NANO.2013.6721049","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721049","url":null,"abstract":"For the various nano-fluidic based biomedical applications, the study of the drag of fluid flow is of interest. Among which, the study of boundary slip is one of the most important and popular issues. Hydrophobic surfaces, which are believed to have a slip length, play an important role in the fluidic applications. There are various methods to measure slip length on hydrophobic surface. This paper induces an improved method based on atomic force microscope (AFM) in contact mode.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121827032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720829
Zhao Xu, Kyungjun Song, P. Mazumder
We demonstrate enhanced sensitivity to refractive index (n) change in THz sensing by using the spoofed surface plasmon polariton (SSPP) architecture modified with gap blocks. The transmission peak as a function of n is significantly sharpened through the introduction of the additional cavity resonance, and such phenomenon is strongly dependent on the geometric dimensions of the block structure as well as the choice of probe frequencies. Non-invasive THz bio-sensing is a promising alternative to conventional tagging-based sensing schemes. In response to the growing demand for lower detection limit, our SSPP gap structure can effectively reduce the sample usage by enabling localized sample deposition within the gap cavity. The differentiation of DNA molecules with distinct binding states is demonstrated, where the conformational change of a thin layer (1μm) of immobilized DNA can lead to significant switching of the waveguide transmittance.
{"title":"Spoofed surface plasmon polariton (SSPP) gap structure for high sensitivity bio-sensing in THz","authors":"Zhao Xu, Kyungjun Song, P. Mazumder","doi":"10.1109/NANO.2013.6720829","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720829","url":null,"abstract":"We demonstrate enhanced sensitivity to refractive index (n) change in THz sensing by using the spoofed surface plasmon polariton (SSPP) architecture modified with gap blocks. The transmission peak as a function of n is significantly sharpened through the introduction of the additional cavity resonance, and such phenomenon is strongly dependent on the geometric dimensions of the block structure as well as the choice of probe frequencies. Non-invasive THz bio-sensing is a promising alternative to conventional tagging-based sensing schemes. In response to the growing demand for lower detection limit, our SSPP gap structure can effectively reduce the sample usage by enabling localized sample deposition within the gap cavity. The differentiation of DNA molecules with distinct binding states is demonstrated, where the conformational change of a thin layer (1μm) of immobilized DNA can lead to significant switching of the waveguide transmittance.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116919331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720966
R. Qaisi, C. Smith, M. Ghoneim, Q. Yu, M. Hussain
We demonstrate a buried contact based novel test structure for direct contact resistivity measurement of graphene-metal interfaces. We also observe excellent contact resistivity ~1 μO-cm2 without any additional surface modification suggesting that the intrinsic Au-graphene contact is sufficient for achieving devices with low contact resistance. The chemical mechanical polishing less test structure and data described herein highlights an ideal methodology for systematic screening and engineering of graphene-metal contact resistivity to enable low power high speed carbon electronics.
{"title":"Direct measurement of graphene contact resistivity to pre-deposited metal in buried contact test structure","authors":"R. Qaisi, C. Smith, M. Ghoneim, Q. Yu, M. Hussain","doi":"10.1109/NANO.2013.6720966","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720966","url":null,"abstract":"We demonstrate a buried contact based novel test structure for direct contact resistivity measurement of graphene-metal interfaces. We also observe excellent contact resistivity ~1 μO-cm2 without any additional surface modification suggesting that the intrinsic Au-graphene contact is sufficient for achieving devices with low contact resistance. The chemical mechanical polishing less test structure and data described herein highlights an ideal methodology for systematic screening and engineering of graphene-metal contact resistivity to enable low power high speed carbon electronics.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126105266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720848
N. Aymerich, A. Rubio
This paper presents a comprehensive approach to the smart application of redundancy techniques in multiple-layer hierarchical systems. Computing systems today are rapidly evolving into increasingly complex structures with an ever-increasing number of components. Moreover, future technology generations are expected to have associated lower levels of quality. For these reasons, it is emerging nowadays a renewed interest in the development of reliable architectures. In this work we delve into this topic putting special emphasis on the system hardware hierarchy. We analyze the advantages in terms of reliability of distributing redundancy effort in cross-layer systems. We base our analysis on a general fault model that takes into account both devices and interconnections. Using the Rent's Law we relate the number of devices and interconnections for different configurations of redundancy and compare the global error probability. Our results provide meaningful information about the benefits that can be achieved by properly choosing the system layer at which to apply redundancy, and if applicable, the optimal distribution of redundancy effort through the system layers.
{"title":"Study on the optimal distribution of redundancy effort in cross-layer reliable architectures","authors":"N. Aymerich, A. Rubio","doi":"10.1109/NANO.2013.6720848","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720848","url":null,"abstract":"This paper presents a comprehensive approach to the smart application of redundancy techniques in multiple-layer hierarchical systems. Computing systems today are rapidly evolving into increasingly complex structures with an ever-increasing number of components. Moreover, future technology generations are expected to have associated lower levels of quality. For these reasons, it is emerging nowadays a renewed interest in the development of reliable architectures. In this work we delve into this topic putting special emphasis on the system hardware hierarchy. We analyze the advantages in terms of reliability of distributing redundancy effort in cross-layer systems. We base our analysis on a general fault model that takes into account both devices and interconnections. Using the Rent's Law we relate the number of devices and interconnections for different configurations of redundancy and compare the global error probability. Our results provide meaningful information about the benefits that can be achieved by properly choosing the system layer at which to apply redundancy, and if applicable, the optimal distribution of redundancy effort through the system layers.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115193547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720965
A. Mayet, Casey Smith, M. Hussain
We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young's modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young's modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch.
{"title":"Energy reversible switching from amorphous metal based nanoelectromechanical switch","authors":"A. Mayet, Casey Smith, M. Hussain","doi":"10.1109/NANO.2013.6720965","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720965","url":null,"abstract":"We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young's modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young's modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124615935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720978
M. Darbandi, S. Jafari, R. Zakeri
We use the Dissipative Particle Dynamics (DPD) method to simulate the variation in the configuration of a polymer chain, whose two ends are fixed in a nanochannel, subject to bulk motion of fluid particles. We aim to find suitable relations between the polymer chain curvature and the mean flow velocity magnitudes. In this regard, we introduce some important parameters, which can effectively affect the polymer chain curvature and we examine their magnitudes on the amount of polymer chain deflection. In fact, our main objective is to quantify the relation between some major flow parameters, possibly with different polymer chain properties. For example, we show that different flow velocity magnitudes affect the polymer chain curvature differently. The results of this research open some new perspectives toward designing suitable flow sensors to measure flow characteristics in nanochannel flow applications.
{"title":"Dissipative particle dynamics simulation of a polymer chain behavior fixed in a nanochannel flow","authors":"M. Darbandi, S. Jafari, R. Zakeri","doi":"10.1109/NANO.2013.6720978","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720978","url":null,"abstract":"We use the Dissipative Particle Dynamics (DPD) method to simulate the variation in the configuration of a polymer chain, whose two ends are fixed in a nanochannel, subject to bulk motion of fluid particles. We aim to find suitable relations between the polymer chain curvature and the mean flow velocity magnitudes. In this regard, we introduce some important parameters, which can effectively affect the polymer chain curvature and we examine their magnitudes on the amount of polymer chain deflection. In fact, our main objective is to quantify the relation between some major flow parameters, possibly with different polymer chain properties. For example, we show that different flow velocity magnitudes affect the polymer chain curvature differently. The results of this research open some new perspectives toward designing suitable flow sensors to measure flow characteristics in nanochannel flow applications.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127028122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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