Investigation of refractive index antiguiding structure for asymmetric heterostructure semiconductor laser

Abstract

Anti-guiding layers of asymmetric heterostructure for 100μm-wide-strip GaAs/AlGaAs quantum-well semiconductor lasers emitting at a wavelength of 808 nm are analyzed and calculated theoretically. Choosing three cases of Al-content of antiguiding layer in the active region [containing quantum well (QW) and waveguides], we calculate and analyze the dependences of optical confinement factor, threshold current, maximal output power and vertical beam divergence angle on the thickness of the antiguiding layer, separately. According to the results, when the thickness of antiguiding layer is constant, the higher the Al-content is the greater on performance of device is; when the Al-content in antiguiding layer is constant, the effect on performance of device enlarged with the increase of thickness of antiguiding layer.