Self-aligned mesa HBT with selective epitaxial regrown emitter and no base etch

Abstract

A novel HBT mesa fabrication process is described which utilizes selective OMVPE regrowth of the emitter to simultaneously provide self-aligned base contacts and eliminate the problematical base etch. Additional advantages of this process include the ability to simultaneously achieve a thick extrinsic base for reduced base resistance and thin intrinsic base for reduced base transit time and the ability to simultaneously metallize emitter and base.<>