Towards Thermal Profiling in CMOS/Memristor Hybrid RRAM Architectures

Cory E. Merkel, D. Kudithipudi
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引用次数: 18

Abstract

In this paper, we propose a hybrid temperature sensing resistive random access memory (TSRRAM) architecture composed of traditional CMOS components and emerging memristive switching devices. The architecture enables each RRAM switching element to be used both as a memory bit and a temperature sensor. The TSRRAM is integrated into an Alpha 21364 processor as an L2 cache. Its accuracy and performance were simulated using a customized simulation framework. SPEC2000 benchmarks were used to generate thermal profiles in the Alpha processor core. Active and passive sensing mechanisms are also introduced as means for DTM algorithms to determine the thermal profile of the RRAM switching layer. The proposed architecture yielded a 2.14 K mean absolute temperature error during passive sensing, which is well within the useful range of dynamic thermal management (DTM) algorithms. Furthermore, the proposed design is shown to have only an 8 cycle performance overhead.
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CMOS/忆阻器混合RRAM架构的热分析
本文提出了一种由传统CMOS元件和新兴记忆开关器件组成的混合温度传感电阻随机存取存储器(TSRRAM)架构。该架构使每个RRAM开关元件既可用作存储位又可用作温度传感器。TSRRAM作为二级缓存集成到Alpha 21364处理器中。利用定制的仿真框架对其精度和性能进行了仿真。使用SPEC2000基准测试在Alpha处理器核心中生成热剖面。本文还介绍了主动和被动传感机制,作为DTM算法确定RRAM交换层热分布的手段。所提出的结构在被动感知期间产生2.14 K的平均绝对温度误差,这完全在动态热管理(DTM)算法的有用范围内。此外,所提出的设计显示只有8个周期的性能开销。
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