{"title":"Double-gated silicon field emission arrays: fabrication and characterization","authors":"L. Chen, A. Akinwande","doi":"10.1109/IVNC.2004.1354971","DOIUrl":null,"url":null,"abstract":"In this work, the gate field factor and focus field factor were examined in the double-gated field emission array (FEA) and were shown to have strong influence on the initial beam spread. The optical measurement verified that the device with the tip below the gate aperture provides a small beam spread.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1354971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this work, the gate field factor and focus field factor were examined in the double-gated field emission array (FEA) and were shown to have strong influence on the initial beam spread. The optical measurement verified that the device with the tip below the gate aperture provides a small beam spread.
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