RF characterization of deep-submicron DRAM-embedded CMOS process

Abstract

In this paper rf characteristics of a 0.25 /spl mu/m DRAM embedded CMOS process, focused on the n-MOSFET and the spiral inductor of the critical devices in rf CMOS circuit design, have been investigated. An extremely high cutoff frequency of 44 GHz, high maximum operating frequency of 29 GHz, and a de-embedded minimum noise figure of 1.0 dB have been obtained for a 0.24 /spl mu/m n-MOSFET. As for the spiral inductors, we obtained a peak quality factor of 5.2 at 3.6 nH for a 5-turn inductor and also an inductance of 1.2 to 22.6 nH for inductors with various numbers of turns. These figures of merit seem to be suitable for rf circuits with operating frequency up to 2.5 GHz although the low quality factor of the spiral inductor should be improved.