M. Hauf, C. Sandow, F. Niedernostheide, G. Schmidt
{"title":"Tailoring the performance of silicon power diodes by predictive TCAD simulation of platinum","authors":"M. Hauf, C. Sandow, F. Niedernostheide, G. Schmidt","doi":"10.1109/ISPSD.2018.8393617","DOIUrl":null,"url":null,"abstract":"Today's silicon power diodes typically make use of platinum to adjust the charge carrier lifetime, which influences the device performance. In this work, we present how platinum in silicon can be modelled in terms of process and device simulation in a predictive manner. Furthermore, we demonstrate how this simulation tool can be used to predict performance tradeoffs which allow the tailoring of the electrical device performance.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"220 S713","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Today's silicon power diodes typically make use of platinum to adjust the charge carrier lifetime, which influences the device performance. In this work, we present how platinum in silicon can be modelled in terms of process and device simulation in a predictive manner. Furthermore, we demonstrate how this simulation tool can be used to predict performance tradeoffs which allow the tailoring of the electrical device performance.