Packaging of Ultrathin Flexible Magnetic Field Sensors with thin Silicon and Polyimide Interposer

D. Ernst, M. Wild, T. Zerna
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引用次数: 1

Abstract

Ultrathin sensors are used in a wide range of applications. In the current work an ultrathin sensor for Active Magnetic Bearings (AMB) has to be realized. Previous studies show very good results by the use of thin silicon interposer with a thickness of $50 \mu \mathrm{m}[1][4]$. With this technology sensor packages thinner than $150 \mu \mathrm{m}$ have been already realized. First results with thin polyimide interposer are shown in [3]. With this approach the thickness can be reduced down to less than $100 \mu \mathrm{m}$ in total.With a focus on improving the long-term reliability the process was optimized within the present work. Therefore the metallization of the sensor and the substrate were investigated. On sensor side the chosen material for interconnecting is gold with different thicknesses of 100 nm and 200 nm. On substrate side bare copper is compared with deposited NiAu on that copper. To evaluate the reliability of the sensor packages several test specimen were manufactured. These test specimen were aged afterwards in a temperature shock test (-20 °C, +85 °C; 15 minutes dwell time). As expected, the test specimen with an additional NiAu layer show lower failure rate after aging until 3400 cycles compared to the bare copper. But, there are still early failures before 100 cycles for any substrate-sensor-combination of some 5 %.As an alternative interconnecting technology soldering with SnAgBi solder paste was investigated as well. Therefore sensor dies with a bismuth layer were prepared and soldered onto test specimen. First results promise that this technology is able to be a proper alternative to Flip Chip interconnecting.
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用薄硅和聚酰亚胺中间体封装超薄柔性磁场传感器
超薄传感器有着广泛的应用。在目前的工作中,必须实现用于主动磁轴承(AMB)的超薄传感器。以往的研究表明,使用厚度为$50 \mu \ mathm {m}[1][4]$的薄硅中间体,效果非常好。利用这项技术,已经实现了厚度小于$150 \mu \math {m}$的传感器封装。薄聚酰亚胺中间体的第一个结果显示在[3]中。通过这种方法,厚度可以减少到小于$100 \mu \ mathm {m}$。在目前的工作中,以提高长期可靠性为重点,对工艺进行了优化。因此,对传感器和衬底的金属化进行了研究。在传感器侧,选择的互连材料是100 nm和200 nm不同厚度的金。在衬底侧,将裸铜与沉积在铜上的NiAu进行了比较。为了评估传感器封装的可靠性,制作了几个试样。这些试样随后在温度冲击试验中老化(-20℃,+85℃;停留时间15分钟)。正如预期的那样,与裸铜相比,添加NiAu层的试样在老化至3400次循环后的故障率较低。但是,对于任何衬底-传感器组合,在100次循环之前仍有大约5%的早期故障。作为一种替代的互连技术,用SnAgBi锡膏进行了焊接研究。因此,制备了带铋层的传感器模具并将其焊接到试样上。初步结果表明,这项技术能够成为倒装芯片互连的合适替代方案。
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