{"title":"Quantitative incorporation of sodium in CuInSe/sub 2/ and Cu(In,Ga)Se/sub 2/ photovoltaic devices","authors":"J. Granata, J. Sites, S. Asher, R. Matson","doi":"10.1109/PVSC.1997.654109","DOIUrl":null,"url":null,"abstract":"Sodium was deliberately introduced into CuInSe/sub 2/ and Cu(In,Ga)Se/sub 2/ photovoltaic solar cells in a controlled manner. The amount of sodium added was varied in order to pinpoint the range of sodium concentrations in the CuIn(Ga)Se/sub 2/ film for optimal performance. Films were analyzed using secondary ion mass spectroscopy and induced-coupling plasma spectroscopy to quantify the sodium concentration. The results are compared with the calculation. Finished devices show improvements in open-circuit voltage, fill factor and hole density for sodium concentrations in the range of approximately 0.05 to 0.5 atomic percent.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"305 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
Sodium was deliberately introduced into CuInSe/sub 2/ and Cu(In,Ga)Se/sub 2/ photovoltaic solar cells in a controlled manner. The amount of sodium added was varied in order to pinpoint the range of sodium concentrations in the CuIn(Ga)Se/sub 2/ film for optimal performance. Films were analyzed using secondary ion mass spectroscopy and induced-coupling plasma spectroscopy to quantify the sodium concentration. The results are compared with the calculation. Finished devices show improvements in open-circuit voltage, fill factor and hole density for sodium concentrations in the range of approximately 0.05 to 0.5 atomic percent.
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