A High Performance 2-18.5 GHz Distributed Amplifier, Theory and Experiment

T. Mckay, R. Williams
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引用次数: 2

Abstract

A high performance 2-18.5 GHz monolithic GaAs MESFET distributed ampIifier has been designed and fabricated. The m-derived drain line design is analyzed theoretically and a closed form gain equation is presented. Theoretical predictions are compared to measured results and more complicated CAD models. The measured small signal gain is typically 8.0 /sup +-/ 0.25dB from 2-18.5 GHz at standard bias. Typical input return loss is greater than 12dB and the output return loss is greater than 15dB. The saturated output power is in excess of 23dBm over most of the band and the noise figure is less than 7.5dB.
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高性能2-18.5 GHz分布式放大器,理论与实验
设计并制作了一种高性能2-18.5 GHz单片GaAs MESFET分布式放大器。对m型漏极线设计进行了理论分析,并给出了封闭形式的增益方程。将理论预测与测量结果和更复杂的CAD模型进行比较。在标准偏置下,在2-18.5 GHz范围内测量的小信号增益通常为8.0 /sup +-/ 0.25dB。典型的输入回波损耗大于12dB,输出回波损耗大于15dB。大部分频段的饱和输出功率大于23dBm,噪声系数小于7.5dB。
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