H. Mnif, T. Zimmer, J. Battaglia, B. Ardouin, D. Berger, D. Céli
{"title":"A new approach for modelling the thermal behaviour of bipolar transistors","authors":"H. Mnif, T. Zimmer, J. Battaglia, B. Ardouin, D. Berger, D. Céli","doi":"10.1109/ICCDCS.2002.1004036","DOIUrl":null,"url":null,"abstract":"A new physical model which describes the self-heating phenomena - the device temperature rise due to its own internal power dissipation - is presented. It permits the accurate temporal response determination of the BJT junction's temperature rise. This model is validated using measurements from an silicon-germanium heterojunction bipolar transistor (Si-Ge HBT).","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A new physical model which describes the self-heating phenomena - the device temperature rise due to its own internal power dissipation - is presented. It permits the accurate temporal response determination of the BJT junction's temperature rise. This model is validated using measurements from an silicon-germanium heterojunction bipolar transistor (Si-Ge HBT).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
