Photomagnetic Effect and Photoconductivity in Magnetic Field in Ag-Doped MBE p-HgCdTe

D. Protasov, V. Kostuchenko, V. Krylov, V. N. Ovsyuk
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Abstract

The influence of Ag-doping on photomagnetic effect and photoconductivity in magnetic field in p-HgCdTe was investigated. Photoconductivity was measured in Faraday and Foight geometries. Such recombination parameters as lifetime, mobility of minor carriers and velocities of surface recombination are determined from this measurements using least-square fitting. Using temperature dependencies of carriers lifetime, the decrease of density of recombination centers up to two order in an investigated sample after silver doping was revealed
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掺银MBE p-HgCdTe的光磁效应和光电导率
研究了银掺杂对p-HgCdTe光磁效应和光电导率的影响。光电导率以法拉第几何和弗莱特几何测量。利用最小二乘拟合方法确定复合参数,如寿命、小载流子迁移率和表面复合速度。利用载流子寿命的温度依赖性,揭示了银掺杂后所研究样品中复合中心密度降低了两个数量级
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