S. S. Parihar, Jun Z. Huang, Weike Wang, K. Imura, Y. Chauhan
{"title":"Self-Heating characterization and modeling of 5nm technology node FinFETs","authors":"S. S. Parihar, Jun Z. Huang, Weike Wang, K. Imura, Y. Chauhan","doi":"10.1109/DRC55272.2022.9855797","DOIUrl":null,"url":null,"abstract":"Modern-day integrated circuits suffer from severe self-heating (SH) even when operating at GHz frequencies. In this work, we present the thermal impedance characterization and modeling for 5nm node FinFET devices for the first time. Considerable difference in iso-thermal frequencies (fiso) for n- (~5 GHz) and p-type (~2.5 GHz) devices is a crucial experimental observation. Calibrated SPICE simulation shows a 40–70 °C rise in the temperature.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Device Research Conference (DRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC55272.2022.9855797","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Modern-day integrated circuits suffer from severe self-heating (SH) even when operating at GHz frequencies. In this work, we present the thermal impedance characterization and modeling for 5nm node FinFET devices for the first time. Considerable difference in iso-thermal frequencies (fiso) for n- (~5 GHz) and p-type (~2.5 GHz) devices is a crucial experimental observation. Calibrated SPICE simulation shows a 40–70 °C rise in the temperature.
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