Design And Realization of Low Noise Amplifier at 3 GHz Frequency for T/R Module

Abstract

T/R module is construction module for transmited and received signal from telecommunication system of microwaves. T/R module has many function with transmitted and received system from radar antena. Block at T/R module can amplity RF signal received, it called Low Noise Amplifier (LNA). Low Noise Amplifier (LNA) is a device function to push noise that happened in a received microwave. This final project is about the design and realization of Two Stage Low Noise Amplifier operating 3 GHz using type transistor BFP420 and BFP840ESD Bipolar Junction Transistor, with impedance matching Qarterwafe Transformers used microstrip line technique. Design and simulation used ADS 2009 software. According to the simulation, to the gain obtained is about 30,810 dB, while in a result measurement, the gain obtained is about 18 dB, then according result simulation the noise figure obtained is 1,863 dB, while in a result measurement 1,978 dB. Value of a result simulation for the return loss input is about -24,543 dB, for the result measurement is about -5,14465 dB. While for the value of a result simulation return loss output is about -24,402 dB, for the result measurement return loss output is about -48,067 dB at frequency 3 GHz.