A single-inductor dual-output boost DC-DC converter with 0.5V start-up

Meng-Lieh Sheu, L. Tsao, Kai-Chun Liang
{"title":"A single-inductor dual-output boost DC-DC converter with 0.5V start-up","authors":"Meng-Lieh Sheu, L. Tsao, Kai-Chun Liang","doi":"10.1109/EDSSC.2017.8126541","DOIUrl":null,"url":null,"abstract":"This paper presents a single-inductor dual-output (SIDO) DC-DC boost converter with current controlled pulse frequency modulation (PFM) scheme. The SIDO operated in continuous conduction mode (CCM) uses a single inductor for storing energy and alternatively delivers the energy to an output loading terminal and a supply voltage controller terminal. To ensure a stable operation, the supply voltage controller terminal is always charged before the output loading terminal. A start up circuit is utilized for low input voltage operation. The chip designed with TSMC 0.18μm 1P6M CMOS process operates at an input voltage range from 0.5V to 1.8V, and maintains two output voltages of 1.8V and 3V. An efficiency of 80.7% is achieved at 30mA load current and 0.5V input voltage. A maximal efficiency of 88.6% is achieved when the load current is 120mA at the input voltage of 1.5V.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"298 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This paper presents a single-inductor dual-output (SIDO) DC-DC boost converter with current controlled pulse frequency modulation (PFM) scheme. The SIDO operated in continuous conduction mode (CCM) uses a single inductor for storing energy and alternatively delivers the energy to an output loading terminal and a supply voltage controller terminal. To ensure a stable operation, the supply voltage controller terminal is always charged before the output loading terminal. A start up circuit is utilized for low input voltage operation. The chip designed with TSMC 0.18μm 1P6M CMOS process operates at an input voltage range from 0.5V to 1.8V, and maintains two output voltages of 1.8V and 3V. An efficiency of 80.7% is achieved at 30mA load current and 0.5V input voltage. A maximal efficiency of 88.6% is achieved when the load current is 120mA at the input voltage of 1.5V.
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单电感双输出升压DC-DC变换器,0.5V启动
本文提出了一种采用电流控制脉冲调频(PFM)方案的单电感双输出DC-DC升压变换器。SIDO在连续传导模式(CCM)下工作,使用单个电感来存储能量,并交替地将能量传递到输出负载终端和电源电压控制器终端。为了保证稳定运行,电源电压控制器端子总是在输出负载端子之前充电。启动电路用于低输入电压工作。采用台积电0.18μm 1P6M CMOS工艺设计的芯片工作在0.5V ~ 1.8V的输入电压范围内,维持1.8V和3V两个输出电压。在30mA负载电流和0.5V输入电压下,效率达到80.7%。当负载电流为120mA,输入电压为1.5V时,效率最高可达88.6%。
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