{"title":"Electromigration in advanced Bond Pad structures","authors":"Ki-Don Lee","doi":"10.1109/IRPS.2013.6532077","DOIUrl":null,"url":null,"abstract":"VIATOP (VT), Aluminum Via connecting the bond pad and the Top Copper level, is the critical component for Bond Pad (BP) Electromigration (EM) in advanced technology nodes, where a smaller VT or its array is employed for maximum chip-scaling. In this study, we evaluated BP EM using various dimensions of VT, investigated the scaling effect, and proposed a BP EM model for current crowding & reservoir effect in the VT.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"312 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
VIATOP (VT), Aluminum Via connecting the bond pad and the Top Copper level, is the critical component for Bond Pad (BP) Electromigration (EM) in advanced technology nodes, where a smaller VT or its array is employed for maximum chip-scaling. In this study, we evaluated BP EM using various dimensions of VT, investigated the scaling effect, and proposed a BP EM model for current crowding & reservoir effect in the VT.
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