K. Matsushita, H. Ninomiya, T. Naijo, M. Izumi, S. Umekawa
{"title":"Low gate capacitance IEGT with Trench Shield Emitter (IEGT-TSE) realizing high frequency operation","authors":"K. Matsushita, H. Ninomiya, T. Naijo, M. Izumi, S. Umekawa","doi":"10.1109/ISPSD.2013.6694438","DOIUrl":null,"url":null,"abstract":"A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from floating p-well during switching. To demonstrate this effect, we exhibit switching waveforms by a numerical simulation and a fabricated device at 1200 blocking voltage class.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from floating p-well during switching. To demonstrate this effect, we exhibit switching waveforms by a numerical simulation and a fabricated device at 1200 blocking voltage class.
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