{"title":"Researchs of Temperature Influence on Breakdown Characteristics of Power Planar SOI MOSFET","authors":"E. Artamonova, A.U. Krasukov","doi":"10.1109/SIBEDM.2007.4292925","DOIUrl":null,"url":null,"abstract":"In this paper the researches of breakdown characteristics of power planar SOI MOSFET in on and off state is suggested to investigate the heat influence on device reliability.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4292925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper the researches of breakdown characteristics of power planar SOI MOSFET in on and off state is suggested to investigate the heat influence on device reliability.
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