Coupled distributed bragg reflector for high brightness red light-emitting diodes

Yu Tian, Li Xu, Zhiwei Xue, Zhipeng Wei, Fei Yu, Zou Yonggang, Xiao-hui Ma, Wei Zhao, Qingxue Sui, Zhimin Zhang
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Abstract

AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.
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高亮度红色发光二极管用耦合分布式布喇格反射器
采用金属-有机化学气相沉积(MOCVD)法制备了具有耦合分布bragg反射体的AlGaInP led。结果表明,该结构LED的峰值波长为625nm,注入电流为20mA时,正常发光强度可提高到164mcd。
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