{"title":"On-Chip TSV Testing for 3D IC before Bonding Using Sense Amplification","authors":"Po-Yuan Chen, Cheng-Wen Wu, D. Kwai","doi":"10.1109/ATS.2009.42","DOIUrl":null,"url":null,"abstract":"We present a novel testing scheme for TSVs in a 3D IC by performing on-chip TSV monitoring before bonding, using a sense amplification technique that is commonly seen on a DRAM. By virtue of the inherent capacitive characteristics, we can detect the faulty TSVs with little area overhead for the circuit under test.","PeriodicalId":106283,"journal":{"name":"2009 Asian Test Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"142","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Asian Test Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS.2009.42","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 142
Abstract
We present a novel testing scheme for TSVs in a 3D IC by performing on-chip TSV monitoring before bonding, using a sense amplification technique that is commonly seen on a DRAM. By virtue of the inherent capacitive characteristics, we can detect the faulty TSVs with little area overhead for the circuit under test.
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