M. N. Karim, S. Hossain, S. Barua, Koushik Barua, K. R. Islam
{"title":"A fully integrated low power UWB LNA using self-body-bias technique for 6.2–10.6 GHz applications","authors":"M. N. Karim, S. Hossain, S. Barua, Koushik Barua, K. R. Islam","doi":"10.1109/ICECE.2014.7026898","DOIUrl":null,"url":null,"abstract":"In this paper, a low power CMOS UWB low noise amplifier (LNA) suitable for 6.2-10.6 GHz application is presented. Using simultaneous noise matching (SNIM) and self-body-bias technique, the proposed LNA is designed to operate with low supply voltage in order to reduce power consumption. The simulated results showed that at 0.62V supply voltage, the LNA consumed 3.84mW with a maximum gain of 10 dB and average noise figure of 4.55 dB over the band of interest. Minimum port reflection parameters, S11 and S22 for the proposed amplifier were found <;-10 dB whereas 1-dB compression point was found at -16.2 dBm.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Conference on Electrical and Computer Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECE.2014.7026898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, a low power CMOS UWB low noise amplifier (LNA) suitable for 6.2-10.6 GHz application is presented. Using simultaneous noise matching (SNIM) and self-body-bias technique, the proposed LNA is designed to operate with low supply voltage in order to reduce power consumption. The simulated results showed that at 0.62V supply voltage, the LNA consumed 3.84mW with a maximum gain of 10 dB and average noise figure of 4.55 dB over the band of interest. Minimum port reflection parameters, S11 and S22 for the proposed amplifier were found <;-10 dB whereas 1-dB compression point was found at -16.2 dBm.