Y. Ebihara, Aiko Ichimura, Shuhei Mitani, M. Noborio, Y. Takeuchi, Shoji Mizuno, T. Yamamoto, K. Tsuruta
{"title":"Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd","authors":"Y. Ebihara, Aiko Ichimura, Shuhei Mitani, M. Noborio, Y. Takeuchi, Shoji Mizuno, T. Yamamoto, K. Tsuruta","doi":"10.1109/ISPSD.2018.8393598","DOIUrl":null,"url":null,"abstract":"Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The structure optimization was carried out for switching-loss reduction. The improved switching characteristics were obtained by the balanced JFET resistance and the gate-drain capacitance.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"503 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393598","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The structure optimization was carried out for switching-loss reduction. The improved switching characteristics were obtained by the balanced JFET resistance and the gate-drain capacitance.
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