Avalanche transistor short pulse generator trials for GPR

Aitykul Omurzakov, A. K. Keskin, A. S. Turk
{"title":"Avalanche transistor short pulse generator trials for GPR","authors":"Aitykul Omurzakov, A. K. Keskin, A. S. Turk","doi":"10.1109/UWBUSIS.2016.7724188","DOIUrl":null,"url":null,"abstract":"This paper presents impulse generator for ground penetrating radar (GPR) transmitter based on multiplication effect of avalanche transistor. Different impulse generators are designed using single and multiple avalanche transistors. Circuits with multiple transistors used both serial and parallel connections of transistors. 100 kHz signal with 2.2 V and 3 ns pulse width was used as a trigger signal. 280 V DC bias voltage required for single and triple cascaded transistor circuit. Bias voltage for double and quadruple transistor circuit was 370 V DC. Maximum 150 V output with 1.5 ns pulse width was obtained. Circuit schematics and results are demonstrated.","PeriodicalId":423697,"journal":{"name":"2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UWBUSIS.2016.7724188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

This paper presents impulse generator for ground penetrating radar (GPR) transmitter based on multiplication effect of avalanche transistor. Different impulse generators are designed using single and multiple avalanche transistors. Circuits with multiple transistors used both serial and parallel connections of transistors. 100 kHz signal with 2.2 V and 3 ns pulse width was used as a trigger signal. 280 V DC bias voltage required for single and triple cascaded transistor circuit. Bias voltage for double and quadruple transistor circuit was 370 V DC. Maximum 150 V output with 1.5 ns pulse width was obtained. Circuit schematics and results are demonstrated.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于探地雷达的雪崩晶体管短脉冲发生器试验
介绍了一种基于雪崩晶体管倍增效应的探地雷达发射机脉冲发生器。不同的脉冲发生器设计使用单和多个雪崩晶体管。带有多个晶体管的电路使用晶体管的串行和并行连接。采用2.2 V、3ns脉宽的100khz信号作为触发信号。单级和三级级联晶体管电路需要280 V直流偏置电压。双晶体管和四晶体管电路的偏置电压为370 V DC。最大输出150v,脉宽1.5 ns。给出了电路原理图和结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Improved detection scheme for non-coherent UWB communications Frequency dependences of signal insertion losses in devices on SAW with piezoelectric acoustic duct Extraordinary reflection from photonic crystal with metamaterials E-plane T-junctions of rectangular waveguides with vibrator-slot coupling between arms of different dimensions Implementation of the extinction theorem in a problem of Airy pulse scattering by a dielectric layer
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1